Feb 17 – 19, 2015
FBK, Trento
Europe/Zurich timezone

TCAD Simulation of HVCMOS sensors

Feb 17, 2015, 3:00 PM
20m
"Stringa" Conference Hall (FBK, Trento)

"Stringa" Conference Hall

FBK, Trento

Via Sommarive, 18 38123 Povo - Trento ITALY

Speaker

Mathieu Benoit (UNIGE)

Description

We present a TCAD simulation study of the properties of HVCMOS sensors as a function of substrate resistivity, pixel topology and biasing scheme. The effect of these parameters on the timing and detection efficiency will be discussed.

Primary author

Presentation materials