10th Anniversary "Trento" Workshop on Advanced Silicon Radiation Detectors

TCAD Simulation of HVCMOS sensors

17 Feb 2015, 15:00

20m

"Stringa" Conference Hall (FBK, Trento)

HV CMOS 1

Speaker

Mathieu Benoit (UNIGE)

Description

We present a TCAD simulation study of the properties of HVCMOS sensors as a function of substrate resistivity, pixel topology and biasing scheme. The effect of these parameters on the timing and detection efficiency will be discussed.

Presentation materials

Slides

CC_resistivity_100_thickness_20_pwidth_5.0_gap_5_overhangp_0_overhangn_0_position_16.66665_bias_-80.gif

CC_resistivity_100_thickness_20_pwidth_5.0_gap_5_overhangp_0_overhangn_0_position_33.33333_bias_-80.gif

CC_resistivity_10_thickness_20_pwidth_5.0_gap_5_overhangp_0_overhangn_0_position_16.66665_bias_-80.gif

CC_resistivity_10_thickness_20_pwidth_5.0_gap_5_overhangp_0_overhangn_0_position_33.33333_bias_-80.gif

MB_TCAD.pdf

MB_TCAD.pptx