- Gian-Franco Dalla Betta (INFN and University of Trento)
- Maurizio Boscardin (FBK Trento)
2/17/15, 9:00 AM
Dr Robert Klanner (Hamburg University)
2/17/15, 9:10 AM
The voltage stability and the charge-collection properties of segmented silicon sensors are strongly influenced by the charge and potential distributions on the sensor surface, the charge distribution in the oxide and passivation layers, and by Si-SiO2 interface states. To better understand these complex phenomena, measure¬ments on test structures and sensors, as well as TCAD simulations...
Valerio Re (Universita e INFN, Pavia (IT))
2/17/15, 9:50 AM
The next generation of silicon pixel detectors at high energy physics and photon science experiments sets unprecedented and extreme requirements to the microelectronic systems that are used to read out the sensors. Front-end integrated circuits have to provide advanced analog and digital signal processing functions in pixel readout cells with a pitch of a few tens of a µm. They have to handle...
Marko Mikuz (Jozef Stefan Institute (SI))
2/17/15, 10:15 AM
Electric field in silicon irradiated with neutrons up to 1e17 n_eq/cm^2 was investigated by edge-TCT. Methods for absolute determination of electric field were developed. From the v(E) dependence mobility degradation with fluence was extracted. A simple field structure was observed, consistent with a SCR and "ENB", a region that does not contribute to leakage current and the electric field is...