Speakers
Sergei Abdrashitov
(National Research Tomsk Polytechnic University)
Timur Tukhfatullin
(National Research Tomsk Polytechnic University)
Description
The total yield of the radiation from ultra-relativistic 150 GeV electrons and positrons was estimated by semiclassical Baier-Katkov method in [1] and for 1 GeV electrons in the framework of classical electrodynamics in [2]. Angle-of-incidence dependence of the total yield of channeling radiation (CR) from 155-855 MeV electrons in Si and W was considered in [3] using developed code [4]. Also the possibility to use angle-of-incidence dependence of the total yield of CR for the alignment of thin Si and W crystals and initial angular divergence of the particle beam was suggested in [3].
Here we consider the angle-of-incidence dependence of the total yield of CR from 255 MeV electrons at <100> axial, (100) and (111) planar channeling in 0.7 and 20 μm Si and 50 μm C crystals. Simulation are performed in connection with the experimental program on the interaction of electrons with crystals at linear accelerator of SAGA Light Source (Tosu, Saga, Japan) [5].
References
1. V. N. Baier et al. Electromagnetic Processes at High Energies in Oriented Single Crystals, (1998).
2. Yu.M. Filimonov and Yu.L. Pivovarov // RREPS-93, Tomsk, 1993, 248
3. S.V. Abdrashitov et al, Nucl. Instr. Meth. Phys. Res.B. B 309C (2013) 59.
4. O.V. Bogdanov et al J. of Phys.: Conf. Ser. 236 (2010) 1.
5. Y. Takabayashi et al, Nuovo Cimento C 34 (4) (2011) 221.
Authors
Oleg Bogdanov
(Tomsk Polytechnic University)
Sergei Abdrashitov
(National Research Tomsk Polytechnic University)
Sultan Dabagov
(INFN)
Timur Tukhfatullin
(National Research Tomsk Polytechnic University)
Yuri Pivovarov
(V.E. Zuev Institute of Atmospheric Optics SB RAS)
