EP Seminar

New developments in silicon detectors

by Dr. P. Jarron, Dr. M. Winter (CERN et IReS-Strasbourg)

Stückelberg Auditorium

Stückelberg Auditorium

In this seminar two projects of new pixel silicon detectors for charged particle tracking will be presented: the deposition of hydrogenated amorphous silicon above integrated circuits and the Monolithic Active Pixel Sensors. Hydrogenated amorphous silicon - a-Si:H - has been considered for a long time as a potential semiconductor material candidate to build low cost radiation sensors. Poor charge collection and insufficient signal to noise ratio have been the main issues preventing successful results. The deposition of hydrogenated amorphous silicon films above the readout integrated circuits is an attractive approach to overcome these issues and could allow to build radiation hard and low cost pixel detectors for tracking applications. Properties and fabrication of thin film a-Si:H detector will be discussed, and very preliminary results of a-Si:H deposition on ASICs will be presented. Monolithic Active Pixel Sensors are new type of semi-conducting pixel which is expected to combine specific advantages of Charged Coupled Devices and Hybrid Pixel Sensors in a fully integrated architecture, where the read-out micro-circuits are implemented on the sensor substrate. Tests of the first prototypes demonstrate that this technology allows to detect m.i.p.s with high performances and is already adapted to rather sizeable radiation fluxes. The main results obtained will be discussed and the current and planned developments will be presented.

Organiser(s): E. Cortina-Gil

Note: UNIVERSITE DE GENEVE Ecole de physique Département de physique nucléaire et corspusculaire 24, Quai Ernest-Ansermet 1211 GENEVE 4 TéL: (022) 702 62 73 Fax: (022) 781 21 92
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