OTHER SEMINARS - RD49 SEMINAR ON RADIATION HARDENED ACTIVE PIXEL SENSOR (APS)<BR>Activities in the Area of Radiation Hard CMOS APS Image Sensors at Ph

by Dr. Eid (Columbia)

Tuesday 14 Nov 2000, 11:00 → 12:00 Europe/Zurich

304/1-001 (CERN)

A set of CMOS APS image sensor test chip, which was designed employing the physical design techniques of enclosed geometry and guard rings and fabricated in a 0.5-um CMOS process, underwent a Co60 gamma-ray irradiation experiment. The experiment demonstrated that implementing the physical design techniques of enclosed geometry and guard rings in CMOS APS image sensors is possible. It verified that employing these design techniques does not represent a fundamental impediment for the functionality and performance of CMOS APS image sensors. It further proved that CMOS APS image sensors that employ these physical design techniques yield better dark signal performance in ionizing radiation environment than their counterpart that do not employ those physical design techniques. In addition, second and third sets of experimental radiation hard CMOS APS image sensors were also designed and fabricated employing a 0.35-um and a 0.25-um standard CMOS fabrication process. The characterization of these devices are currently underway. Short Biography: Dr. Eid earned his Ph.D. degree from Columbia University, New York. His primary area of expertise is image sensors, including charge-coupled devices (CCDs), charge injection devices (CIDs), and CMOS active pixel sensors (APS). He has been involved in the development of various image sensors for the past fifteen years. He is currently with Photobit Corporation, Pasadena, California, where he manages the development of custom CMOS APS image sensors. A group of these custom image sensors is radiation hard CMOS APS image sensors for star trackers, being developed under a NASA SBIR award from Goddard Space Flight Center. Dr. Eid is a member of SPIE, NYAS, and a senior member of IEEE.

Organiser(s): Pierre Jarron / EP