OTHER SEMINARS - RD49 SEMINAR ON DEEP SUBMICRON CMOS TECHNOLOGY:<br>Characterisation of statistical device property fluctuations in deep-submicron CMO

by Hans Tuinhout (Philips Research Laboratories, Eindhoven, The Netherlands )

Thursday 6 Jul 2000, 11:00 → 11:15 Europe/Zurich

CERN

Fluctuations of transistor properties often referred to as mismatch, have always formed a limiting factor for the performance of high precision analogue electronic circuits. Scaling of transistor dimensions combined with reduced supply voltages, have in recent years also brought the digital VLSI world into a position where random device fluctuations impact the circuit performance and/or yield. This explains why 'matching' or statistical device property fluctuations receives increasing attention in IC technology R&D. This talk will focus on how matching characterisation can be used to obtain insight into the microscopical structure of deep-submicron MOS technologies. Several examples will be presented that demonstrate how seemingly subtle technological effects can have devastating impact on the matching performance of MOS transistors. About the speaker: Hans Tuinhout has worked in the field of process and device characterisation for CMOS and BiCMOS processes at Philips Research Laboratories in Eindhoven, The Netherlands since 1980. His current research activities are focused on very accurate DC device measurements for characterisation and improvement of matching performance of IC processes.