The nonvolatile semiconductor memory (NVSM) was first proposed by Dawon Kahng and Simon Sze in 1967 (Bell Syst. Tech. J., 46, 1288). The proposal introduced the floating-gate concept for charge storage and nonlinear transport processes for programming and erasure. Among the unique features of this device are nonvolatility, i.e., exceptionally long storage time (10-100 years) after the source of power is removed, electrical rewritability, low power consumption, and high bit density. The invention has subsequently given rise to a large family of memory devices including flash memory, EPROM, and EEPROM. Since the early 1990's, NVSM has become the dominant memory for portable electronic systems such as the cellular phone, notebook computer, internet appliance, smart IC card, digital camera, portable DVD player, PDA, MP3 player, and GPS receiver. Around 10 billion NVSM-based units have been produced over the last 5 years. In this talk, we will present the basic physics of NVSM, review its development in the past 38 years, consider its impact on society, and discuss various emerging technologies such as the nanocrystal memory for Tb (1012 bits) nonvolatile memories.
Organiser(s): L. Alvarez-Gaume/PH-TH - J. Kirkby/PH-EP
