9–12 May 2006
Palais du Pharo, Marseille
Europe/Zurich timezone

Growth and characterization of fast scintillator ZnO single crystal

10 May 2006, 14:00
1h
Palais du Pharo, Marseille

Palais du Pharo, Marseille

poster • Conversion materials and photodetectors Poster session : detection modules and electronics

Speaker

Dr weidong Xiang (College of Applied Technology, Wenzhou University)

Description

Zinc oxide (ZnO) single crystal has attracted much attention due to its potential application in ultra violet (UV) and blue light-emitting devices. In addition, ZnO crystal is a promising fast scintillator. It is reported that doped ZnO crystals exhibited pulse rise-times <100ps and fall times <1ns, which are faster than any currently available scintillators. However, it is difficult to obtain ZnO bulk crystal due to its strong polar surfaces and volatilization at higher temperatures. In the present work, a flux Bridgman technique was developed and doped ZnO bulk crystals have been grown from a high temperature solution of ZnO-PbF2 system. The growth defects were characterized and the physical properties were measured.

Author

Prof. Jiayue Xu (Shanghai Institute of Ceramics, Chinese Academy of Sciences)

Co-authors

Mr Xinhua Li (Shanghai Institute of Ceramics, Chinese Academy of Sciences) Dr weidong Xiang (College of Applied Technology, Wenzhou University)

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