Name: 15th RD50 Workshop
Start: 2009-11-16T13:30:00+01:00
End: 2009-11-18T16:30:00+01:00
Location: CERN

15th RD50 Workshop

from Monday, 16 November 2009 (13:30) to Wednesday, 18 November 2009 (16:30)

Monday, 16 November 2009
13:30
13:30 - 13:45
Room: TE Auditorium
Contributions

13:30 Welcome to the 15th RD50 Workshop - Michael Moll (CERN)
13:45
13:45 - 14:45
Room: TE Auditorium
Contributions

13:45 The ATLAS Insertable B-Layer (IBL) - Heinz Pernegger (CERN)

14:15 A low mass 4 layer pixel system for CMS - Hans-Christian Kaestli (PSI)
14:45
14:45 - 17:35
Room: TE Auditorium
Contributions

14:45 The comparison of the defect generation during the proton irradiation in situ and afterwards in silicon - Juozas Vaitkus (Vilnius University)

15:05 INTERSTITIAL DEFECT REACTIONS IN P-TYPE SILICON IRRADIATED AT DIFFERENT TEMPERATURES - Leonid Makarenko (Belarusian State University)

15:55 The deep levels in the irradiated Si (WODEAN samples) - Juozas Vaitkus (Vilnius University)

16:15 Microscopic Study of Proton Irradiated Epitaxial Detectors - Volodymyr Khomenkov (Hamburg University)

16:35 Generation of a shallow donor after 6, 15 and 900 MeV electron irradiation - alexandra junkes (Hamburg University)

16:55 TSC studies on n- and p-type MCZ Si pad detectors irradiated with neutrons up to 10^16 n/cm^2 - Monica Scaringella (University of Florence)

17:15 Discussion: Wodean & Defect Characterization
17:45

17:45 - 19:30
Room: IT Auditorium
Tuesday, 17 November 2009
09:15
09:15 - 12:30
Room: TE Auditorium
Contributions

09:15 Mixed irradiation studies with magnetic czochralski diodes - Robert Eber (IEKP, KIT)

09:35 Results on diodes - Katharina Kaska (Technische Universitaet Wien)

09:55 Charge Collection and Trapping in Epitaxial Silicon Detectors after Neutron Irradiation - Thomas Poehlsen (University of Hamburg)

10:15 CCE in irradiated silicon detectors with a consideration of avalanche effect - Vladimir Eremin (Ioffe Physical-Technical Institute RAS)

11:05 Detailed investigation of charge multiplication properties in highly irradiated thin epitaxial silicon diodes - Jörn Lange (University of Hamburg)

11:25 Investigation of electric field and charge multiplication in irradiated silicon detectors by Edge-TCT - Gregor Kramberger (Jozef Stefan Institute)

11:45 Effects of annealing on charge collection in heavily irradiated silicon micro-strip detectors - Marko MILOVANOVIĆ (Jozef Stefan Institute, Ljubljana)

12:00 Recent results of annealing measurements in p-type microstrip detector with SCT128 chip (Late submission) - Igor Mandic (University of Ljubljana)

12:15 Discussion: Pad Detectors and Charge Multiplication
12:30 Lunch break
Lunch break
12:30 - 14:00
Room: TE Auditorium
14:00
14:00 - 16:50
Room: TE Auditorium
Contributions

14:00 First Results of SiBT test beam 2009 - Jaakko Haerkoenen (Helsinki Institute of Physics HIP)

14:20 Interstrip resistance in silicon position-sensitive detectors - Elena Verbitskaya (Ioffe Physical-Technical Inst. RAS)

14:40 Charge collection annealing study of p-in-n silicon microstrip detectors - Craig Wiglesworth (Department of Physics)

15:00 Annealing of Charge Collection Efficiency in highly irradiated MCz-n strip detectors. - Nicola Pacifico (CERN & Universita degli Studi di Bari)

15:20 Surface properties of ATLAS n-on-p sensors - Hartmut Sadrozinski (SCIPP, UC santa Cruz)

16:10 Full-size ATLAS Sensor Testing (Late submission) - Jan Bohm (Institute of Physics)

16:30 Discussion on Strip Sensors (FDS)
16:50
16:50 - 18:50
Room: TE Auditorium
Contributions

16:50 Alibava System Hardware - Ricardo Marco Hernandez (Instituto de Fisica Corpuscular (IFIC)-Universitat de Valencia-U)

17:10 Alibava - a discussion on Software and FAQ - Henry Brown (University of Liverpool)

17:30 Status of the CERN ALIBAVA system - Eduardo Del Castillo Sanchez (CERN)

17:50 Status of the Freiburg ALIBAVA systems on the laser and beta setups - Michael Breindl (Freiburg University)

18:10 Status of the Glasgow Alibava system
19:30

19:30 - 23:00
Room: Bois Joly
Wednesday, 18 November 2009
09:15
09:15 - 12:35
Room: TE Auditorium
Contributions

09:15 New Measurement of Lorentz angles for electrons and holes in silicon detectors - Mike Schmanau (IEKP-KIT-Germany)

09:35 New Detectrors with Novel Electrode Configurations for Applications in sLHC and Photon Sciences - Zheng Li (BNL)

09:55 Measurements of 3D/FBK sensors - Alessandro La Rosa (CERN)

10:15 Results of Beam Test Measurements with 3D-DDTC Silicon Strip Detectors - Michael Koehler (Freiburg University)

11:05 Simulations of guard ring designs for n-on-p sensors and of 3D detectors - Daniela Bortoletto (Purdue University)

11:25 Charge collection studies of irradiated 3D detectors (Late submission) - Richard Bates (Department of Physics and Astronomy)

11:45 Beam tests of Medipix2/Timepix double-sided 3D detectors (Late submission) - Marco Gersabeck (University of Glasgow)

12:05 Discussion on Pixel, 3D and new structures
12:35 lunch break
lunch break
12:35 - 14:00
Room: TE Auditorium
14:30
14:30 - 16:30
Room: TE Auditorium
Contributions

14:30 Production of RD50 sensors at MICRON

15:00 Production of RD50 sensors at VTT

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