Speaker
Description
Ferroelectric lead compounds having a perovskite structure, such as Pb(Zn1/3Nb2/3)O3 (PZN) [1],
Pb(Mg1/3Nb2/3)O3 (PMN) [2], and their solid solutions with PbTiO3 (PT), have been investigated
for high-performance ultrasonic transducer applications [3-4]. The integration of such materials
as thin films have attracted considerable attention these last years thanks to their outstanding
performances that allow to consider new features for the realization of photovoltaic device.
Ferroelectric thin films, especially those derived from BaTiO3 composition, have been studied for
about thirty years for microelectronics, telecommunications and optics applications. For most
applications, it is necessary to approach the single crystal in a thin layer, in order to limit losses
(dielectric, optical ...). The advantage of thin films relative to the solid material is then multiple:
ability to embed on microcircuits, lower cost than single crystals and geometry for new efficient
designs. PZN-4.5PT thin films properties, or ferroelectric materials in general, change
significantly with the structural and constitutive properties of considered material. Thus, to
consider their integration in applications such as microsystems, it is essential to determine
beforehand the influence of these parameters on the electrical performance of the studied
materials.
Our study focuses to investigate structural, dielectric and ferroelectric properties of PZN-4.5PT
nanoparticles thin films on Silicon substrate.
Keywords: perovskite, nanoparticles, thin film.
