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Silver (Ag) ions of 360 keV were implanted into polycrystalline SiC to a fluence of 2×1016 cm-2 at room temperature. Some of the as-implanted samples were irradiated with xenon (Xe) ions of 167 MeV to a fluence of 3.4×1014 cm-2 at room temperature. Both the as-implanted and implanted then irradiated samples were isochronal annealed at temperatures ranging from 1100 oC to 1500 oC in steps of 100 oC for 5 h. The as-implanted, irradiated and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), Raman spectroscopy and scanning electron microscopy (SEM). Implantation of Ag at room temperature amorphized SiC, while swift heavy ion (SHI) irradiation of the as-implanted samples caused some recrystallization of the amorphized layer. SHI irradiation causes no migration of implanted Ag. Diffusion of implanted Ag was already taking place at 1100 oC for irradiated sample while its started at 1200 oC for Un-irradiated sample. This was due to difference in grain boundary diffusion in the two samples. Irradiated samples had fine grains after annealing at 1100 oC, this lead to the fast diffusion of Ag combined with loss of about 70% of Ag from the surface. While un-irradiated samples had relatively larger grains, this caused less diffusion of silver. Decomposition of SiC were observed after annealing at 1500 oC for both samples.
