Conveners
Electronic Materials & Processing
- Agnė Žukauskaitė (Fraunhofer Institute for Applied Solid State Physics IAF)
Electronic Materials & Processing
- Agnė Žukauskaitė (Fraunhofer Institute for Applied Solid State Physics IAF)
The next generation of smart phones requires bandpass filter based on acoustic wave devices working at frequencies of up to 6 GHz in order to adapt all mobile communication standards available worldwide. To enable high frequency and efficient energy transfer of these devices, highly piezoelectric and very stiff layers are required. Therefore, we have developed thin lay-ers of wurzite ScAlN...
Al$_{1-x}$Sc$_{x}$N is an attractive material for radio frequency microelectromechanical systems (RF-MEMS) due to higher piezoelectric coefficient d$_{33}$=27.6 pC/N (x=0.43) compared to 6 pC/N in pure AlN [1] and increased electromechanical coupling k$_{t}$$^{2}$ [2]. Mechanical properties such as elastic modulus and coefficient of thermal expansion (CTE) are important for designing RF-MEMS....
Integrated electronic power devices such as HEMTs (high electron mobility transistors) and LEDs are often built of a layer stack of gallium nitride (GaN), aluminium gallium nitride (AlGaN) and/or aluminium indium nitride (AlInN) layers. For the performance of the devices it is essential that such nitride stacks are highly crystalline and defect-free. In order to obtain such perfect structures,...
With the emergence of low power and flexible applications, e.g. to power wearable electronics, on-chip cooling etc., the demand for high performance flexible and transferable thermoelectric thin films is on rise. Here, we report the growth of high performance nanoporous Ca3Co4O9 thin films with controlled porosity by a simple and scalable sequential-sputtering-and-annealing method. Ca3Co4O9 is...
The intermediate band solar cell (IBSC) is one of the promising candidates for the next generation of photovoltaic cells with a maximum theoretical efficiency of 63% at full sunlight concentration [1], and quantum dot (QD) based IBSCs are intensively studied. The QD-IBSCs reported to date often show a drop in the open-circuit voltage at 1 sun, however, the voltage and hence the cell efficiency...
This work reports the effect on the electrical and morphological properties of co-doping ZnO thin films with Bi and Al/Ga. To do so, a confocal sputtering geometry was used with a Bi target and two intrinsically doped ZnO:Ga and ZnO:Al targets. By depositing at an intentional heating of 200 ºC and applying a post-deposition thermal treatment at 350 ºC and 300 ºC, for ZnO:Ga,Bi and ZnO:Al,Bi,...
