RADSAGA School: Jyväskylä Summer School

Europe/Helsinki
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Department of Physics University of Jyväskylä Finland
Description

Date: 6- 10 August 2018

Venue: Jyväskylä

The Jyväskylä Summer School will be the second training event of 2018 which will gather all the ESR students in the RADSAGA training network and will take place from August 6th to August 10th 2018 at the University of Jyväskylä, Finland. General information on Summer School can be found here.

Two main RADSAGA related courses will be featured in the Summer School:

PH1 - Radiation Interaction in Electronic Materials, 

Lecturer: Dr. Arto Javanainen (JYU)

Course content:

This course will introduce basic radiation-matter interactions that are underlying the radiation effects in electronics, Emphasis will be on ion-matter interactions, but also the photon-matter interactions will be discussed. The above mentioned subjects will be linked with the Radiation Hardness Assurance (RHA) testing of electronics. Some basic methods involved in RHA will be introduced using the RADEF facility as showcase. The course contains a laboratory work that will take place in the RADEF facility.

PH2 - Challenges and Radiation Performances of Advanced and Emerging CMOS Technologies,

Lecturer: Professor Cor Clayes, (KU Leuven, Belgium & Fellow IEEE, Fellow ECS)

Course content:

CMOS devices, driven by minimum device geometry, performance enhancement, cost issues and low power consumption, are achieved by using optimizing process modules, introducing new materials and implementing novel device concepts. FD technologies with ultra-thin body and buried oxide (UTBB SOI) have potential down to the 10 nm mode. There exists strong competition between planar UTBB SOI and bulk FinFETs. Tunnel-FETs (TFETs), relying on band-to-band-tunneling and allowing steep subthreshold swings are enabling a lower power consumption. Further scaling leads to gate-all-around and nanowire devices. Optimized epitaxial growth resulted in the fabrication of Ge (p-channel), III-V (n-channel) or hybrid Ge/III-V devices on a Si substrate.

The radiation performance of several of these advanced and emerging technologies will be analyzed and discussed. Some of the available models to explain the experimental data will be reviewed.

 

 

Registration
Participants
    • 09:00 11:00
      FYSV445 Radiation interactions in electronic materials: Lecture
      Convener: Dr Arto Javanainen (University of Jyväskyä)
    • 09:00 11:00
      FYSV445 Radiation interactions in electronic materials: Lecture
      Convener: Dr Arto Javanainen (University of Jyväskylä)
    • 13:00 15:00
      FYSV446 Challenges and Radiation Performance of Advanced and Emerging CMOS Technologies: Lecture
      Convener: Dr Arto Javanainen (University of Jyväskylä)
    • 09:00 11:00
      FYSV445 Radiation interactions in electronic materials: Lecture
      Convener: Dr Arto Javanainen (University of Jyväskylä)
    • 13:00 15:00
      FYSV446 Challenges and Radiation Performance of Advanced and Emerging CMOS Technologies: Lecture
      Convener: Dr Arto Javanainen (University of Jyväskylä)
    • 09:00 11:00
      FYSV445 Radiation interactions in electronic materials: Lecture
      Convener: Dr Arto Javanainen (University of Jyväskylä)
    • 13:00 15:00
      FYSV446 Challenges and Radiation Performance of Advanced and Emerging CMOS Technologies: Lecture
      Convener: Dr Arto Javanainen (University of Jyväskylä)
    • 09:00 11:00
      FYSV445 Radiation interactions in electronic materials: Lecture
      Convener: Dr Arto Javanainen (University of Jyväskylä)
    • 13:00 15:00
      FYSV445 Radiation interactions in electronic materials: LAB DEMONSTRATION (Group 1)
      Convener: Dr Arto Javanainen (University of Jyväskylä)
    • 15:00 17:00
      FYSV445 Radiation interactions in electronic materials: LAB DEMONSTRATION (Group 2)
      Convener: Dr Arto Javanainen (University of Jyväskylä)