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14th "Trento" Workshop on Advanced Silicon Radiation Detectors

25–27 Feb 2019
FBK, Trento
Europe/Zurich timezone

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Session

Session 8: 3D Sensors

3D
27 Feb 2019, 09:00
Aula Grande (FBK, Trento)

Aula Grande

FBK, Trento

Via Santa Croce, 77 38122 Trento ITALY

Conveners

Session 8: 3D Sensors

  • Gian-Franco Dalla Betta (INFN and University of Trento)

Presentation materials

There are no materials yet.

  1. 102. Performance of irradiated 3D pixel sensors interconnected to RD53A readout chip
    Simone Gennai (Università degli Studi e INFN Milano (IT))
    27/02/2019, 09:10
    3D Sensors
    Oral

    In this presentation results obtained in beam test experiments with 3D columnar pixel sensors interconnected with the RD53A readout chip will be reported. The 3D pixel sensors were produced at FBK foundry in an R&D agreement with Istituto Nazionale di Fisica Nucleare (INFN, Italy). A few modules, each consisting of a 3D pixel sensor bump-bonded to an RD53A chip, were irradiated at the CERN...

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  2. 119. Radiation hard 3D silicon pixel sensors with thin active substrates
    Stefano Terzo (IFAE Barcelona (ES))
    27/02/2019, 09:40
    3D Sensors
    Oral

    A new generation of 3D pixel detectors with high granularity and thin active substrates is being developed for the upgrade of the ATLAS Inner Tracker (ITk) at HL-LHC. The new sensors will have to fulfil the requirements for the innermost pixel layers in terms of radiation hardness and rate capabilities.

    Two productions of 3D sensors compatible with the new RD53A chip (the prototype of the...

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  3. 121. Test beam characterization of irradiated SINTEF 3D pixel sensors
    Mr Andreas Lokken Heggelund (University of Oslo (NO))
    27/02/2019, 10:00
    3D Sensors
    Oral

    The upcoming High Luminosity LHC (HL-LHC) puts stringent requirements on the tracking detectors situated closest to the interaction point in the planned Inner Tracker (ITk) of the ATLAS experiment. 3D pixel detectors have been proposed as a candidate for the innermost layers of the ITk since these detectors decouple the sensor thickness and the inter-electrode spacing, effectively increasing...

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  4. 92. Fabrication of active-edge detectors without support wafer using a unique "perforated edge" approach
    Dr Marco Povoli (SINTEF MiNaLab, Oslo, Norway)
    27/02/2019, 10:20
    Oral

    Minimisation of insensitive volume in silicon sensors is highly demanded in many applications for high energy physics, structural biology, synchrotron experiments and nuclear medicine. A large contribution to this insensitive volume is the guard rings and current terminating structures required in conventional planar silicon sensor that surround the chip periphery. The maximum size of silicon...

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