25–27 Feb 2019
FBK, Trento
Europe/Zurich timezone

Session

Session 6: CMOS Sensors (1)

CMOS 1
26 Feb 2019, 14:00
Aula Grande (FBK, Trento)

Aula Grande

FBK, Trento

Via Santa Croce, 77 38122 Trento ITALY

Conveners

Session 6: CMOS Sensors (1)

  • Gregor Kramberger (Jozef Stefan Institute (SI))

Presentation materials

There are no materials yet.

  1. Ivan Peric (KIT - Karlsruhe Institute of Technology (DE))
    26/02/2019, 14:00
    Oral

    HVCMOS pixel detectors developed for applications in particle physics (experiments Mu3e, ATLAS, CLIC) will be presented. The detectors have been implemented in 180 nm commercial HVCMOS process. High resistivity substrates and quadruple well structure have need used. The sensors have been realized as systems on a chip, they contain active pixel matrix, readout circuits and digital blocks....

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  2. Angelo Rivetti (INFN - National Institute for Nuclear Physics), Angelo Rivetti (Universita e INFN Torino (IT))
    26/02/2019, 14:20
    Oral

    Fully depleted monolithic CMOS sensors allow the prompt collection by
    drift of large signals. They therefore can offer better signal-to-noise ratio, time resolution and radiation tolerance with respect to
    conventional solutions. In this presentation, a technology that, thanks to
    a patterned back-side, allows a full depletion of the substrate in the 100
    um - 400 um range is presented. The...

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  3. Mr Chenfan Zhang (FBK)
    26/02/2019, 14:40
    Oral

    The industrial standard High Voltage CMOS (HV-CMOS) technology is a promising candidate for future particle physics experiments. The CERN-RD50 collaboration develops depleted CMOS sensors to improve their features so that they meet the requirements of future particle physics experiments. In this work we propose the design of a new prototype chip based on LFoundry 0.15um technology, which...

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  4. Carlos Solans Sanchez (CERN)
    26/02/2019, 15:00
    Oral

    The upgrade of the ATLAS experiment for the High-Luminosity LHC requires the installation of a new Inner Tracker detector to cope with the 5 fold increase in luminosity and a 10 fold increase in number of interactions per bunch crossing. A Monolithic Active Pixel Sensor prototype, MALTA, has been developed on 180 nm TowerJazz CMOS imaging technology, following the latest developments in CMOS...

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  5. Mathieu Benoit (UNIGE)
    26/02/2019, 15:20
    Oral

    The ATLASPix is a monolithic pixel sensor designed in ams aH18 HV-CMOS technology to demonstrate the achievable performances and demonstrate the radiation hardness of the technology. The prototypes were produced in an engineering run on three substrate resistivities spanning from $20$ to $200~\Omega\cdot cm$. We present here the characterization in laboratory and test beam of the produced...

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