Conveners
Session 2: Planar Sensors (1)
- Anna Macchiolo (Max-Planck-Institut fur Physik (DE))
The LHC is planning an upgrade program which will bring the luminosity up to about $7.5\cdot 10^{34} \text{cm}^{-2}\text{s}^{-1}$ in 2027, with the goal of an integrated luminosity of 3000 fb$^{-1}$ by the end of 2037. This High Luminosity scenario, HL-LHC, will present new challenges of higher data rates and increased radiation tolerance for the pixel detector ($2\cdot 10^{16}...
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system.
The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with
pixel sensors, since it is radiation hard and cost effective.
The paper reports on the performance of thin n-on-p planar pixel sensors...
Silicon detectors for applications in future high energy particle physics experiments face the challenge to withstand increasing radiation doses, while stringent requirements are set on resolution and material budget. The RD50 collaboration strives to understand the effects of radiation defects in silicon detectors and investigates novel ideas for radiation-hard detector concepts. One...
Nowadays silicon strip sensors in high luminosity experiments usually consist of a p-doped bulk with n-type strip implants. General consensus is that such a design requires an additional interstrip isolation structure like a p-stop implant. If no additional implant is implemented between the strips, it is expected that the interstrip resistance will be insufficient before and especially after...
Over the past years, an in-depth study of irradiated and annealed p-type silicon strip sensors as they will be used for HL-LHC Upgrades was performed. Measurements of the collected charge, noise and cluster size were regularly performed as a function of increasing annealing time and bias voltage. A large number of sensors under study showed a signal larger than the one originally deposited....
For medium and highly irradiated silicon devices such as
strip detectors or diodes it has been observed that the commonly used CV
method for deriving depletion voltage as well as doping level is not as easily
applicable as for unirradiated devices. The reason for the arising difficulties is
that defects created in silicon can capture and release charge
carriers and therefore show a time...
