34th RD50 Workshop (Lancaster)

Session

CMOS Sensors

14 Jun 2019, 09:00

Cavendish Lecture Theatre, Faraday Building (Lancaster University)

Conveners

CMOS Sensors

• Daniel Muenstermann (Lancaster University (GB))
• Eva Vilella Figueras (University of Liverpool (GB))

25. Design work of depleted CMOS sensors within the CERN-RD50 collaboration

Eva Vilella Figueras (University of Liverpool (GB))

14/06/2019, 09:00

This contribution describes design work within the CERN-RD50 collaboration to develop depleted CMOS sensors in the 150 nm HV-CMOS (High Voltage-CMOS) process from LFoundry. In particular, we will present the design details of a test chip, named RD50-MPW2, which was submitted for fabrication in January 2019. We will also present the design towards a new pixel flavour, known as a sampling pixel,...

8. TCAD simulation and test results of neutron irradiated OVERMOS, a CMOS 180nm MAPS detector

Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB))

14/06/2019, 09:20

We will present latest results of dark current (I-V) and charge collection efficiency (CCE, obtained using a calibrated laser source) of OVERMOS, a high resistivity TJ 180nm CMOS MAPS, irradiated with neutrons up to 1e15 cm-2 fluence. Results of charge collection within the 40 x 40 um2 pixel region,with 5um resolution, and charge collection time will be shown.
Test results are compared with...

18. TCAD Simulation of the HVCMOS sensor for the MIDAS personal active dosimeter

Dimitrios Loukas (Nat. Cent. for Sci. Res. Demokritos (GR))

14/06/2019, 09:40

The MIDAS device is an active dosimeter for application in the mixed field of space environment under development. It will use active pixel sensors for the measurement of energy depositions by charged particle tracks in Si pixel layers covering five out of six faces of a plastic scintillator cube. The Si active pixel sensors are based on commercial High Voltage CMOS technology which has proven...

15. Development of a modular DAQ to characterize the RD50 depleted monolithic active pixel sensors

Dr Ricardo Marco Hernandez (CERN)

14/06/2019, 10:00

This contribution will describe the last developments carried out and the ones foreseen for the characterization of the RD50 MPW1 and RD50 MPW2 depleted monolithic pixel sensors implemented in the LFoundry 150 nm technology in the framework of the RD50 collaboration. A modular and scalable DAQ system is being developed for this purpose and for other possible applications in the future...

22. TCT measurements of the H35DEMO HV-CMOS detector by ams

Ettore Zaffaroni (Universite de Geneve (CH))

14/06/2019, 11:00

TCT measurements have been performed on the H35DEMO chip, a HV-CMOS sensor produced by ams in H35 350 nm technology, before and after proton and neutron irradiation. The proton irradiation has been performed at the Bern Inselspital cyclotron (18 MeV) and at the Proton Syncrotron at CERN (24 GeV) up to more than $10^{15}$ 1 MeV $n_\mathrm{eq}/\mathrm{cm}^2$. The neutron irradiation has been...

16. LF2 Characterization

Fabian Alexander Forster (IFAE Barcelona (ES))

14/06/2019, 11:20

The LF2 is a depleted MAPS prototype chip produced in 2018 in the LFoundry 150 nm HV-CMOS process by the collaboration of IFAE, University of Liverpool, University of Geneva and KIT with the support of RD50.
The chip includes two monolithic matrices which are completely independent and only share the substrate: a tracking pixel detector and a photon counting device.

The main components of...

36. Discussion

Eva Vilella Figueras (University of Liverpool (GB))

14/06/2019, 11:40