Name: The 37th RD50 Workshop (Zagreb -- online Workshop)
Start: 2020-11-18T09:00:00+01:00
End: 2020-11-20T18:40:00+01:00
Location: No location set

The 37th RD50 Workshop (Zagreb -- online Workshop)

from Wednesday, November 18, 2020 (9:00 AM) to Friday, November 20, 2020 (6:40 PM)

Monday, November 16, 2020
Tuesday, November 17, 2020
Wednesday, November 18, 2020
9:00 AM
9:00 AM - 9:20 AM
Contributions

9:00 AM Workshop opening - Aneliya Karadzhinova-Ferrer (Rudjer Boskovic Institute (HR)) Michael Moll (CERN)
9:20 AM Defect Characterization
Defect Characterization
9:20 AM - 1:30 PM
Contributions

9:20 AM Structural, compositional and defect studies on hadron irradiated B-doped silicon diodes - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

9:40 AM Defect investigations of electron irradiated p-type Si sensors - Anja Himmerlich (CERN)

10:00 AM The boron-oxygen (BiOi) defect complex induced by irradiation with 23 GeV protons in p-type epitaxial silicon diodes - Chuan Liao (Hamburg University (DE))

10:20 AM An increase of the quantum yield in highly irradiated Si. - Juozas Vaitkus (Vilnius University )

10:50 AM Alpha irradiation induced stability studies in single crystal diamond radiation detectors - N V L Narasimha Murty (Associate Professor, IIT Tirupati)

11:10 AM Electron, neutron and proton irradiation effects on four-quadrant SiC radiation detectors - Joan Marc Rafí (Instituto de Microelectrónica de Barcelona, CNM-CSIC)

11:30 AM Discussion: Defect and Material Characterization - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
1:30 PM
1:30 PM - 4:40 PM
Contributions

1:30 PM Analysis of I-V characteristics as a method in the study of radiation degradation of Si detectors - Vladimir Eremin (Ioffe Institute)

1:50 PM Radiation effects in the CMS phase 1 pixel detector - Danyyl Brzhechko (Universitaet Zuerich (CH))

2:10 PM Measurements of Sensor Radiation Damage inthe ATLAS Inner Detector using Leakage Currents - Aidan Grummer (University of New Mexico (US)) Sally Seidel (University of New Mexico (US))

2:30 PM Determination of proton hardness factors with commercial PiN diodes - Patrick Ryan Knights (University of Birmingham (GB))

2:50 PM Gamma, neutron, proton irradiated p-type silicon MOS capacitors with aluminium oxide. - Maria Golovleva (Lappeenranta University of Technology, Helsinki Institute of physics)

3:30 PM Irradiation of gate-controlled diodes and MOS capacitors with $^{60}$Co-gamma photons - Patrick Asenov (Nat. Cent. for Sci. Res. Demokritos (GR))

3:50 PM Update on radiation damage investigation of epitaxial p-type silicon using Schottky and pn-junction diodes - Christoph Thomas Klein (Carleton University (CA))

4:10 PM Discussion: Detector Characterization and Simulation - Gianluigi Casse (University of Liverpool (GB)) Joern Schwandt (Hamburg University (DE))
5:30 PM

5:30 PM - 7:30 PM
Thursday, November 19, 2020
9:00 AM Transient Current Techniques (Thursday)
Transient Current Techniques (Thursday)
9:00 AM - 11:20 AM
Contributions

9:00 AM Investigation of the amplitude decrease in subsequent pulse detection in irradiated silicon sensors - Leena Diehl (Albert Ludwigs Universitaet Freiburg (DE))

9:20 AM Charge collection characterization of irradiated diode using a novel edge-on electron beam technique - Mohammadtaghi Hajheidari (Hamburg University (DE))

9:40 AM An update report on the upgrade of the TCT - TPA/SPA experimental station at the ELI Beamlines facility - Gordana Medin (University of Montenegro)

9:55 AM The first TPA signal in LGAD (HPK-P2/HGTD and FBK-W1/UFSD) and PIN using the ELI fs-laser - Gordana Medin (University of Montenegro)

10:10 AM Capabilities of testing detectors for high energy physics by MeV energy ions - Milko Jaksic (Rudjer Boskovic Institute, Zagreb, Croatia)

10:40 AM Characterization of advanced detector and electronic devices performed at RBI - Aneliya Karadzhinova-Ferrer (Rudjer Boskovic Institute (HR))

11:00 AM Discussion on TCT/IBIC techniques
11:20 AM
11:20 AM - 6:00 PM
Contributions

11:20 AM Timing resolution on a 3D silicon pixel detector - Dario De Simone (Universitaet Zuerich (CH))

11:40 AM Simulation and testing results of the low gain avalanche diodes developed by IHEP and IME in China - Mei Zhao (Chinese Academy of Sciences (CN))

12:00 PM Preliminary test results on LGAD devices - Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB))

12:20 PM Status of CNM LGAD Runs - Albert Doblas Moreno

12:40 PM Preliminary USTC-1 LGAD Results and Large Array Characterization for HGTD - Xiao Yang (University of Science and Technology of China (CN))

2:00 PM A summary of the radiation resistance of carbonated gain implants - Marco Ferrero (Universita del Piemonte Orientale/INFN Torino (IT))

2:20 PM Characterization of CMS-ETL HPK2 LGAD samples before irradiation - Marcos Fernandez Garcia (Universidad de Cantabria and CSIC (ES))

2:40 PM LGAD measurements from different producers - Alissa Howard

3:00 PM Efficiency estimation on irradiated LGAD with respect to sensor stability - Vagelis Gkougkousis (CERN)

3:20 PM Preliminary results from mortality studies conducted on the LGADs using the ELI fs-laser beam - Gordana Medin (University of Montenegro)

4:00 PM First results from thin silicon sensors for extreme fluences - Valentina Sola (Universita e INFN Torino (IT))

4:20 PM Electrical and timing performance of AC-LGADs - Alessandro Tricoli (Brookhaven National Laboratory (US))

4:40 PM The "1 micron" project - Nicolo Cartiglia (INFN Torino (IT))

5:00 PM Double Sided LGADs for 5D Measurements - Ronald Lipton (Fermi National Accelerator Lab. (US))

5:20 PM Discussion on LGADs - Giulio Pellegrini (Universidad de Valencia (ES)) Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)) Ivan Vila (IFCA (CSIC-UC)) Salvador Hidalgo (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
Friday, November 20, 2020
9:00 AM RD50 Beta source measurement systems
RD50 Beta source measurement systems
9:00 AM - 11:40 AM
Contributions

9:00 AM Sr90-Beta Setup at CERN SSD: Hardware and Data Analysis - Julian Alexander Boell (Hamburg University (DE))

9:20 AM JSI charge collection/timing setup - Gregor Kramberger (Jozef Stefan Institute (SI))

9:40 AM Characterization with a β-source setup of the FBK UFSD 3.2 & HPK2 LGAD productions - Federico Siviero (Universita e INFN Torino (IT))

10:00 AM Comprehensive mip particle measurement and analyses system - Vagelis Gkougkousis (CERN)

10:20 AM Coffee Break

10:40 AM Beta setup in Zurich - Matias Senger (Universitaet Zuerich (CH))

11:00 AM Discussion on Beta Setup
1:00 PM
1:00 PM - 5:00 PM
Contributions

1:00 PM Irradiation study with passive CMOS pixel detector structures on RD50-MPW2 chips - Igor Mandic (Jozef Stefan Institute (SI))

1:20 PM Radiation tolerant small-pixel passive CMOS sensors with RD53A readout - Yannick Manuel Dieter (University of Bonn (DE))

1:40 PM Characterization of passive CMOS strip detectors - Jan Cedric Honig (Albert Ludwigs Universitaet Freiburg (DE))

2:00 PM Active pixel matrix measurements of irradiated RD50 HV-CMOS prototypes - Patrick Sieberer (Austrian Academy of Sciences (AT))

2:30 PM Inter-pixel resistance measurements of irradiated pixel sensors with different isolation structures - Sinuo Zhang (University of Bonn (DE))

2:50 PM Proposal: Passive CMOS submission for sensors and test structures - David-Leon Pohl David-Leon Pohl (University of Bonn (DE)) David-Leon Pohl (University of Bonn)

3:00 PM Discussion: CMOS sensors - Eva Vilella Figueras (University of Liverpool (GB))

Choose timezone