Paulo Rodrigues Simoes Moreira
(CERN),
Pedro Vicente Leitao
(CERN),
Szymon Kulis
(CERN)
21/09/2020, 14:15
- Status Report
- Q&A
Alessandro Caratelli
(CERN, EPFL)
22/09/2020, 14:10
Xavi Llopart Cudie
(CERN)
22/09/2020, 14:30
Kostas Kloukinas
(CERN)
22/09/2020, 14:50
Ms
Alessandra Fioriti
(CERN)
22/09/2020, 15:10
Manager, Europractice Design Tools
22/09/2020, 15:40
Mr
Benjamin Van Camp, CTO SOFICS
(SOFICS solutions for ICs)
22/09/2020, 16:10
Many fabless companies struggle with the selection of their next process platform: FinFET or thin film SOI or in CMOS?
Though on-chip protection against Electrostatic discharge (ESD) should not determine the choice of technology, it can impact design choices and ultimately cost of the product. For efficient ESD protection, 2 elements are important: the ESD strategy, and the vulnerability of...
Ken Wyllie
(CERN),
Salvatore Danzeca
(CERN)
23/09/2020, 14:00
Jean-Pierre Cachemiche
(Centre National de la Recherche Scientifique (FR))
23/09/2020, 14:15
Luca Sterpone
(Politecnico di Torino)
23/09/2020, 14:45
Matteo Lupi
(CERN / Johann-Wolfgang-Goethe Univ. (DE))
23/09/2020, 15:20
Rudy Ferraro
(CERN)
23/09/2020, 15:45
Raffaele Giordano
23/09/2020, 16:10
Hucheng Chen
(Brookhaven National Laboratory (US)),
Magnus Hansen
(CERN)
24/09/2020, 14:00
Giacomo Ripamonti
(CERN)
24/09/2020, 14:10
Matthias Hamer
(University of Bonn (DE))
24/09/2020, 15:10
Stella Orfanelli
(CERN)
24/09/2020, 15:35
Wladyslaw Dabrowski
(AGH University of Science and Technology (PL))
24/09/2020, 16:10
Simone Paoletti
(Universita e INFN, Firenze (IT))
24/09/2020, 16:35
Seyedali Moayedi
(University of Texas at Arlington (US))
24/09/2020, 17:00
Krzysztof Stachon
(ETH Zurich (CH))
24/09/2020, 17:25