Speaker
Description
Heterostructures based on AlxGa1-xN are the building blocks of state-of the-art high-power and optoelectronic devices working in the visible and ultra-violet range. It was recently found, that the self-assembly of Mn-Mgk complexes in epitaxial GaN:(Mn,Mg) and AlxGa1-xN:(Mn,Mg) allows extending the emission spectra of these In-free compounds to the (near) infrared (IR). Here, through a combination of photoluminescence excitation spectroscopy and theoretical computational analysis based on density functional theory, the most efficient emission channels are identified. Furthermore, by embedding a GaN:(Mn,Mg) active layer between AlxGa1-xN:Mn/GaN distributed Bragg reflectors or layers of porous GaN, the efficiency of the IR emission is significantly enhanced.
