Speaker
Miriam Giparakis
(Institute of Solid State Electronics E362, TU Wien)
Description
Quantum Cascade Detectors (QCDs) utilize the conduction band offset (CBO) of materials to create quantum confined electron states in the well material. The lattice-matched InAs/AlAs0.16Sb0.84 material system shows a large CBO of 2.1 eV at the Γ-point. This material system is therefore a candidate for the design and growth of short-wavelength mid-infrared QCDs. However, InAs has a narrow bandgap of 0.35 eV, which corresponds to an absorption in the InAs substrate for all wavelengths below 3.5 µm.
In the present study we present a lattice-matched InAs/AlAs0.16Sb0.84 QCD grown by molecular beam epitaxy lattice-matched to an n-type InAs substrate. It features an above-bandgap absorption wavelength of 2.7 µm.
Primary author
Miriam Giparakis
(Institute of Solid State Electronics E362, TU Wien)
Co-authors
Hedwig Knötig
(Institute of Solid State Electronics E362, TU Wien)
Maximilian Beiser
(Institute of Solid State Electronics E362, TU Wien)
Hermann Detz
(Institute of Solid State Electronics E362, TU Wien)
Werner Schrenk
(Center for Micro- and Nanostructures E057-12, TU Wien)
Benedikt Schwarz
(Institute of Solid State Electronics E362, TU Wien)
Gottfried Strasser
(Institute of Solid State Electronics E362, TU Wien)
Aaron Maxwell Andrews
(Institute of Solid State Electronics E362, TU Wien)
