Speaker
Bernd Michael Stechauner
(Vienna University of Technology (AT))
Description
The accelerator science has long sought to increase the quality factor of SRF cavities. The approach is to use Nb$_3$Sn in a thin film form grown on Cu. One main advantage of Nb$_3$Sn is its high critical temperature- twice the currently used Nb. The challenge of growing Nb$_3$Sn directly on Cu is multiple and requires the use of a barrier layer in between Nb$_3$Sn and Cu. This work hence propose Ta as the barrier layer, which was fully investigated prior to the Nb$_3$Sn sputter deposition. The results will show that Ta is indeed preventing for any Cu inter diffusion, hence allowing a optimal growth of the Nb$_3$Sn on top.
Author
Bernd Michael Stechauner
(Vienna University of Technology (AT))
Co-authors
Stephanie Fernandez
(CERN)
Guillaume Jonathan Rosaz
(CERN)
Klaudia Hradil
(Vienna University of Technology)
Ana Karen Reascos Portilla
(Centro de Investigaciones Energéti cas Medioambientales y Tecno)
Mauro Taborelli
(CERN)
