Speaker
Nikolaus Rauch
(Christian Doppler Laboratory for Nanoscale Phase Transformations, Center for Surface and Nanoanalytics, Johannes Kepler University Linz)
Description
The need for 3D integration in semiconductor industry has driven the key technology of wafer bonding to a new level. Low temperature plasma activated wafer bonding (LT-PAWB) requires high adhesive forces between two polished surfaces at reduced annealing temperatures. In this process silicon wafers with a deposited dielectric layer (SiO2, SiCxNy) are activated, contacted and annealed. The plasma condition as well as the dielectric’s composition have a significant impact on the final bonding properties. TEM-EDX, AR-XPS, AES and SE are applied on single activated surfaces and bonded samples in order to derive a model of the physical mechanisms occurring during the bonding process.
Author
Nikolaus Rauch
(Christian Doppler Laboratory for Nanoscale Phase Transformations, Center for Surface and Nanoanalytics, Johannes Kepler University Linz)
Co-authors
Dr
Bernhard Rebhan
(EV Group, DI E. Thaller Straße 1, St. Florian/Inn 4782, Austria)
Dr
Viorel Dragoi
(EV Group, DI E. Thaller Straße 1, St. Florian/Inn 4782, Austria)
Dr
Heiko Groiss
(Christian Doppler Laboratory for Nanoscale Phase Transformations, Center for Surface and Nanoanalytics, Johannes Kepler University Linz)
