Vladimir N. Strocov
(Swiss Light Source, Paul Scherrer Institut)
Electronic structure of heterointerfaces plays a pivotal role in their device functionality. Recently, ultrathin films of superconducting NbN have been integrated by MBE with the semiconducting GaN. We use soft X-ray angle-resolved photoelectron spectroscopy (ARPES) to directly measure the momentum-resolved electronic structure and band offsets at this Schottky heterointerface as well as the band-bending profile into GaN. We support the experimental findings with first-principles calculations as well as transport and optical measurements. The Fermi states in NbN are found to align against the band gap in GaN, excluding any electronic cross-talk of the superconducting states in NbN to GaN. This finding opens prospects of integrating superconducting devices into semiconductor technology.
Tianlun Yu
(Swiss Light Source, Paul Scherrer Institut)
John Wright
(Materials Science and Engineering, Cornell University)
Guru Khalsa
(Materials Science and Engineering, Cornell University)
Betül Pamuk
(Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM))
Celesta S. Chang
(School of Applied and Engineering Physics, Cornell University)
Yury Matveyev
(Photon Science, Deutsches Elektronen-Synchrotron DESY)
Thorsten Schmitt
(Swiss Light Source, Paul Scherrer Institut)
David A. Muller
( School of Applied and Engineering Physics, Cornell University)
Grace Xing
(Kavli Institute at Cornell for Nanoscale Science, Cornell University)
Donglai Feng
(Advanced Materials Laboratory, State Key Laboratory of Surface Physics and Department of Physics, Fudan University)
Debdeep Jena
(Kavli Institute at Cornell for Nanoscale Science, Cornell University)
Vladimir N. Strocov
(Swiss Light Source, Paul Scherrer Institut)
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