Ms
Kari Martinez
(Christian Doppler Laboratory for Nanoscale Phase Transformations, Center for Surface and Nanoanalytics, Johannes Kepler University Linz)
Epitaxial Ge0.9Sn0.1 layers are well-suited for Si-integrated optoelectronics. However, their thermal stability at the nanoscale is far from a complete understanding. For detailed insights into the decomposition process induced by the components' negligible miscibility and the low Sn melting temperature, in situ TEM experiments have been performed. To trace the sample evolution upon annealing, cross-sectional and plan view lamellas were cut from mechanically wedge-polished specimens and installed on MEMS-based heating chips with an in-house FIB-assisted approach. Heating experiments were carried out from 300 K to above the Sn melting point. Combining complementary TEM techniques and spectroscopy has provided valuable information for efficient synthesis and application of desired materials.
Ms
Kari Martinez
(Christian Doppler Laboratory for Nanoscale Phase Transformations, Center for Surface and Nanoanalytics, Johannes Kepler University Linz)
Ms
Natalija Santic
(Christian Doppler Laboratory for Nanoscale Phase Transformations, Center for Surface and Nanoanalytics, Johannes Kepler University Linz)
Dr
Alexey Minenkov
(Christian Doppler Laboratory for Nanoscale Phase Transformations, Center for Surface and Nanoanalytics, Johannes Kepler University Linz)
Mr
Johannes Aberl
(Institute of Semiconductor and Solid-State Physics, Johannes Kepler University Linz)
Dr
Lada Vukusic
(Institute of Semiconductor and Solid-State Physics, Johannes Kepler University Linz)
Dr
Moritz Brehm
(Institute of Semiconductor and Solid-State Physics, Johannes Kepler University Linz)
Dr
Heiko Groiß
(Christian Doppler Laboratory for Nanoscale Phase Transformations, Center for Surface and Nanoanalytics, Johannes Kepler University Linz)
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