17th (Virtual) "Trento" Workshop on Advanced Silicon Radiation Detectors

Session

Electronics and ASICs

10: ELE

4 Mar 2022, 09:30

Virtual (Zoom Only) (University of Freiburg (Virtual))

Conveners

Electronics and ASICs

• Nanni Darbo (INFN e Universita Genova (IT))

150. MONOLITH - picosecond time stamping capabilities in fully monolithic highly granular silicon pixel detectors

Magdalena Munker (University of Geneva), Matteo Milanesio (Universite de Geneve (CH))

04/03/2022, 09:30

Applications

Oral

Monolithic silicon pixel detectors are attractive candidates for future large-area trackers in particle physics due to their advantages, for instance to reduce the production effort and material budget. State of the art monolithic silicon pixel detectors can reach high spatial precision. Integrating picosecond time resolution in such devices would significantly improve their performance and...

156. First tracks and initial timing results with Timepix4 ASIC

Robbert Erik Geertsema (Nikhef National institute for subatomic physics (NL))

04/03/2022, 09:50

Electronics

Oral

A single arm beam telescope based on the Timepix4 ASIC was built in order to
perform first tests of synchronous readout and track reconstruction.
The telescope is composed of four planes with n-on-p silicon sensors.
Two of these planes are instrumented with 300 $\mu m$ thick sensors tilted with respect to the beam, to provide high quality spatial measurements, while the remaining two...

157. A monolithic ASIC for the very high precision pre-shower detector of the FASER experiment at the LHC

Lorenzo Paolozzi (CERN)

04/03/2022, 10:10

Electronics

Oral

The design of a monolithic silicon pixel detector for the preshower of the FASER experiment at LHC is in progress, with the purpose of measuring and discriminating electromagnetic showers generated by photons with O(TeV) energies and separation down to 200 µm.
The new detector requires the development of a monolithic silicon pixel sensor with hexagonal pixels of 65 µm side, an extended...

169. Study of the charge carrier properties GaAs:Cr with Timepix3

Dr Petr Smolyanskiy (IEAP CTU in Prague)

04/03/2022, 10:30

Electronics

Oral

Recent advantages in crystal growth have facilitated the production of high resistivity (HR) chromium compensated gallium arsenide (GaAs:Cr), which has become an alternative to silicon especially in X- and gammas-ray detection and imaging, where such sensors profit from their higher absorption efficiency. To explore charge transport properties of the material we measured the dependence of the...