17th (Virtual) "Trento" Workshop on Advanced Silicon Radiation Detectors

Session

CMOS

2: CMOS

2 Mar 2022, 10:00

Virtual (Zoom Only) (University of Freiburg (Virtual))

Conveners

CMOS

• Laura Gonella (University of Birmingham (UK))

CMOS: CMOS 2

• Susanne Kuehn (CERN)

134. MALTA monolithic active pixel sensor Test Beam results

Dumitru-Vlad Berlea (Deutsches Elektronen-Synchrotron Campus Zeuthen (DE))

02/03/2022, 10:00

CMOS

Oral

The MALTA monolithic active pixel sensor is a full-scale particle detector in the Tower Semiconductor 180 nm architecture, with a small collection electrode design. It features a novel asynchronous readout based on a custom designed oversampling of a 37-bit wide bus and low front end power consumption (<80 mW/cm^2). Coupled with radiation hardness up to 1x10^15 neq x cm^2 (NIEL) and 80 Mrad...

159. Depleted Monolithic Active Pixel Sensors (DMAPS) in 180 nm TowerJazz and 150 nm LFoundry Technology for High Radiation and High Rate Environments

Lars Philip Schall (University of Bonn)

02/03/2022, 10:20

CMOS

Oral

Monolithic active pixel sensors with depleted substrates are a promising option for pixel tracker detectors in high radiation environments. Exploiting high resistivity silicon substrate and high bias voltages in commercial CMOS technologies allows to enhance the radiation tolerance to levels of high radiation environments. As part of the DMAPS development, two full-size prototypes with the...

147. Upgrade to the Belle II Vertex Detector with CMOS pixel sensors

Maximilian Babeluk (Austrian Academy of Sciences (AT))

02/03/2022, 11:15

CMOS

Oral

The success of the Belle II experiment at KEK (Japan) relies on the very high instantaneous luminosity, close to 6x10^35 cm^-2 s^-1, expected from the SuperKEKB collider. The beam conditions to reach such luminosity levels generate a large rate of background particles in the inner detection layers of Belle II, which exceeds by far the rate of particles stemming from elementary collisions. This...

158. Performance Evaluation of Stitched Passive CMOS Strip Sensors

Surabhi Sharma (Deutsches Elektronen-Synchrotron (DE))

02/03/2022, 11:35

CMOS

Oral

Future particle physics experiments are motivated by the increase in luminosity and thus the need for intelligent tracking detectors providing fast track and momentum information to select events of interest. The next generation tracking detectors are mostly all silicon detectors and thus finding a cost effective solution to maximise the output is important. Commercial CMOS technology for...

167. Timing properties of the RD50-MPW2 CMOS detector

Bojan Hiti (Jozef Stefan Institute (SI))

02/03/2022, 11:55

CMOS

Oral

The CERN-RD50 collaboration has been developing High Voltage CMOS detector prototypes for high radiation environment based on high resistivity substrate and large collection electrode. In this contribution we will present timing properties of the RD50-MPW2 chip manufactured in LFoundry 150 nm process, which features an active 8 x 8 matrix of pixels with an analog front end and discriminator...

168. Development of a backside biased HV-CMOS sensor in a 150 nm process node for particle detection

Nissar Karim (University of Liverpool)

02/03/2022, 12:15

CMOS

Oral

High Voltage-CMOS (HV-CMOS) sensors are an attractive option for tracking applications due to their high-performance and cost-efectiveness. However, to meet the challenging specifications required by future physics experiments in terms of radiation tolerance, time resolution and granularity, further R&D is needed to boost the performance of these sensors. UKRI-MPW0 is a new HV-CMOS sensor...