17th RD50 Workshop (CERN)

Fabrication of new p-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes.

18 Nov 2010, 11:30

20m

503/1-001 - Council Chamber (CERN)

Development and Characterization of Strip and Pixel Sensors

Speaker

Dr Giulio Pellegrini (Centro Nacional de Microelectronica CNM-IMB-CSIC)

Description

The project aims to fabricate and fully characterize p-type strip detectors with trench electrodes to enhance the charge multiplication effect in the irradiated devices.

Presentation materials

Slides

RD50_trenched.pdf

RD50_trenched.pptx