Speaker
Lisa Sommer
Description
Silicon FinFETs are used in classical CMOS electronics but can also provide an attractive platform for the implementation of spin qubits. Classical transistors usually have highly doped contacts that determine device polarity (n-type or p-type). Our FinFET quantum dots have Schottky contacts formed by a silicide. These contacts can be ambipolar for a midgap silicide such as e.g. NiSi. For a low contact resistance to holes, PtSi is more suitable because it has a lower Schottky barrier height. Here, we study the behavior of these Schottky contacts at cryogenic temperatures and with intrinsic silicon substrates and also investigate ErSi as an potential low resistance n-type Schottky contact material.
Author
Lisa Sommer
Co-authors
Konstantinos Tsoukalas
Matthias Mergenthaler
(IBM Research)
Dr
Siegfried Karg
Dr
Andreas Kuhlmann
Dr
Felix Julian Schupp
Gian Von Salis
(IBM Research)
Dr
Patrick Harvey-Collard
Andreas Fuhrer
(IBM Research)
