30 November 2022 to 2 December 2022
CERN
Europe/Zurich timezone

Ultra-low ion energy implantation: depth control of radioactive probes in nanostructures, using the new ASCII chamber

30 Nov 2022, 18:02
2m
503/1-001 - Council Chamber (CERN)

503/1-001 - Council Chamber

CERN

162
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Poster (In person) Poster Session

Speaker

Koen Karl F Van Stiphout (Georg August Universitaet Goettingen (DE))

Description

The solid-state physics (SSP) collaboration at ISOLDE has a long history of investigating crystal structure, phase changes and magnetic behavior of nanostructures by implanting specific radioactive isotopes and recording their decay to obtain physical information on the atomic scale, using hyper-fine techniques such as perturbed angular correlations (PAC) spectroscopy or emission Mößbauer spectroscopy. However, these experiments typically use implantation energies of 30 keV or more. At these energies, most ions come to rest only several nm below the surface. Directly incorporating these probes into surface structures of only a few nm or thinner has been impossible, despite ever-rising interest in such systems, including 2D materials or thin films of multiferroics.

Here, we present a solution to this problem: the brand new ultra-high vacuum chamber, called the ASPIC’s ion implantation chamber (ASCII). This chamber allows deceleration of the 30 – 60 keV radioactive isotope beams available at GLM, down to 10 eV. The context, design, simulations and potential future research of the chamber are discussed.

Author

Koen Karl F Van Stiphout (Georg August Universitaet Goettingen (DE))

Co-author

Hans Christian Hofsaess (Georg August Universitaet Goettingen (DE))

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