Speaker
Description
The increasing requirements for sub-mm/mm photon sensor cells made of 10-50 um array of single photon avalanche diodes (SPAD) imply higher levels of integration. Standard CMOS processes provide a mature and reliable technology, which allows the co-integration of SPADs and electronics at low costs. A 50% photon detection efficiency has been obtained with timing resolution of about 80 ps FWHM in a 110 nm CMOS technology. Advantages of CMOS SPADs are: light detection and readout on a single chip (simple mechanics, lower cost suitable for mass production); each SPAD can read out individual cells and bad SPADs can be turned off to reduce overall noise (trade-off between active area and noise). CMOS SPAD developments for high-energy physics could find applications for large instrumented surfaces highly segmented (e.g., RICH).
| Requested length | 10 minutes |
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