The concept of Non-Ionizing Energy Loss (NIEL) is used to compare and quantify the damage caused to semiconductor devices in various radiation environments. However, the current NIEL concept has a limitation in predicting the formation rates of cluster and point defects in silicon crystals for different particles and particle energies. Experimental observations have revealed differences in...
According to the observed “Acceptor Removal” effect a radiation induced Boron Containing Donor (BCD) defect is formed in p-type silicon. This defect shows bistable properties that are observed in variations of the depletion voltage as determined from C-V/I-V characteristics in PAD and LGAD structures irradiated with 10^14 1 MeV neutrons/cm2. The electronic properties of the BCD defect in its...
This study focuses on investigating radiation-induced defects in CZ p-type silicon pad diodes by subjecting them to irradiation with 23$\,$GeV protons at various fluences.
Two different diode thicknesses were used: 100$\,$μm and 350$\,$μm. The irradiation fluences applied were 1E+13, 7E+13, and 4E+14$\,$p/cm$^2$.
The macroscopic (IV & CV) and microscopic (TSC) radiation-induced changes in...
Carrier lifetime, being sensitive to defects present within the material, is an important parameter governing the operational characteristics of particle sensors. Therefore, the control of carrier lifetime in particle sensor structures is beneficial for predicting the variations of sensors operational characteristics. Microwave probed photoconductivity transients (MW-PC) technique can be...
In this work, we study boron-induced defects in 4H-SiC Schottky barrier diodes (SBDs) by employing minority carrier transient spectroscopy (MCTS). Additional electrical characterization was performed using temperature-dependent current-voltage (I–V), capacitance-voltage (C–V), and deep-level transient spectroscopy (DLTS) measurements to determine the effects of unintentionally incorporated...
Top-TCT is carried out on non-irradiated and irradiated SiC detectors to study the charge collection, from which the trapping time can be estimated. Electrical characteristic with irradiation up to 7.8e14neq/cm2 has been studied and predicted. Thus, simulation of carriers in RASER has been optimized based on the contribution from trapping time. The electric read-out in RASER is proceed by...
The recent development of FLASH radiotherapy has led to the challenge of developing aequate sensors for active dosimetry in Ultra-High Dose Rate (UHDR) beam delivery. Especially in the case of FLASH electron beams the dose delivery can reach up to several Gy even in a single pulse with a few microsecond duration. The accurate dosimetry of this new UHDR radiotherapy modalities represents a key...
Due to its low leakage currents and high radiation displacement energy, silicon carbide (SiC) is an attractive candidate for future radiation hard detectors.
We present electrical characterization (I-V and C-V) and charge collection efficiency (CCE) measurements in forward and reverse bias for neutron-irradiated samples (CNM run 13575) between $5\times 10^{14}$...
Silicon Carbide (SiC) has several advantageous properties, making it an appealing detector material: the high charge carrier saturation velocity and breakdown voltage allow for a very fine intrinsic time resolution. The larger bandgap suppresses dark current, even for highly irradiated material, which omits the need for cooling and reduces power consumption.
TCAD simulations of SiC devices...
Silicon carbide (SiC) has wider bandgap, higher atomic displacement energy, saturated electron drift velocity and thermal conductivity. It has the potential to become a high time resolution detector resistant to radiation and high temperature. A 4H-SiC Low-Gain Avalanche Detector (LGAD) epitaxial structure has been designed and epitaxial growth. The epitaxial structure of 4H-SiC LGAD was...
Two-photon absorption is a very powerful technique for the characterization of solid-state detectors. A dedicated set-up was developed at PSI (Manchester) which allow the possibility of tuning the laser wavelength (330 nm to 16,000 nm) with order of 150 femtoseconds laser pulses. This opens the possibility to test sensors based on different materials like silicon and diamond sensors with the...
The Two Photon Absorption – Transient Current Technique (TPA-TCT) is a newly developed tool for the characterisation of particle detectors. Contrary to present state of the art TCT, it allows to perform characterisation with a three dimensional spatial resolution. The setup at CERN is used to pioneer the technique with a tabletop setup that is designed for the investigation of silicon based...
In this presentation, we report the findings on the impact of single and multiple trenches employed as isolation structures in TI-LGADs (Trench Low-Gain Avalanche Detectors). Our study focuses on the collection of charge induced by fs-laser at various shooting points along the X-axis, with subsequent recording of waveform data. Subsequently, we compare the deduced X-profiles derived from these...
Tivat - Kotor: 1h 15 min ( welcome drink and catering)
free time Kotor 1h - 1h 15 min (total 2 hours in Kotor)
Depleted monolithic active pixel sensors (''DMAPS'') use multi-well commercial CMOS processes to integrate sensor, front-end and read-out electronics in a single piece of silicon. These devices aim to meet the hit-rate and radiation-hardness requirements of tracker systems in particle collider experiments. In order to do so, they require a careful implementation of a fast readout and the use...
LF-Monopix2 is the latest prototype in a decade-long R&D effort to develop a large DMAPS device in a $\mathrm{150\,nm}$ CMOS process. All pixels in this chip contain both digital and analog electronics within their collection node and they are read-out through a fast column-based synchronous architecture. The design follows the so-called ''large electrode'' approach, where a careful layout of...
TJ-Monopix is series of monolithic pixel detectors with column-drain readout architecture and small collection electrode facilitating low-power designs aiming for high-energy collider experiments.
The latest iteration TJ-Monopix2 is designed in a 180 nm TowerJazz CMOS process and features a pixel size of 33 um x 33 um. Results from laboratory measurements and test beam campaigns...
Monolithic Active Pixel Sensors (MAPS) provide excellent criteria in
terms of pixel size and material budget and have become one of the
most promising candidates for future tracking detectors. Beyond these
aspects, timing is becoming an increasingly important aspect for tracking
detectors, whether it is to reduce event complexity or provide particle
identification via Time of Flight.
In...
This contribution reviews the testbeam results of the RD50-MPW3 chip presented at the last workshop. Detailed analysis results are presented and discussed.
The measured efficiency is far beyond expectations, thus; an extensive analog chip-simulation study has been carried out to find the reason. These simulations as well as their outcome are discussed.
In the end, changes in the design for...
Development of a new generation of 4D, low-material-budget detectors based on LGADs allows for combining high temporal and spatial resolution in one technology. Thin LGAD sensors feature a strong dependence of a deposited energy on the incident angle. Therefore, it is important to study how the incident angle of ionizing particles influences the time resolution.
The talk will report on...
The high-luminosity upgrade of the ATLAS and CMS experiments includes dedicated sub-detectors to perform the time-stamping of minimum ionizing particles (MIPs). These detectors will be exposed up to fluences in the range of 1.5 − 2.5 × 10^15 𝑛𝑒𝑞/𝑐𝑚2 at the end of their lifetime and, Low Gain Avalanche Diode (LGAD) has been chosen as their baseline detection technology. To better understand the...
The latest CNM LGAD run (R15973) was dedicated to improvement of radiations hardness by introduction of carbon in gain layer. Several different carbon doses were used. The initial gain layer doping was chosen to have operational voltage at -30C around 110-130V, thus offering good temporal resolution and good radiation hardness. The first tests after neutron irradiations up to the equivalent...
The gain of charge in LGADs (GQ) and the increase of the leakage current (GI) with respect to the generation current (Igen) are different, due to charge screening of the electric field in the gain layer, trapping-detrapping process and also possible other effects. A TCT was used to simultaneously measure GI and GQ in USFD-FBK4.0 prototypes. A special structure with PIN and LGADs very close...
In the first part of this contribution, I will report the performance of RSD sensors measured at a test beam with 4-6 GeV electrons. The sensors under study are part of the RSD2 production from FBK.
In the second part, I will illustrate the studies carried on to validate the DC-RSD read-out scheme, i.e., the performance and noise levels of amplifiers connected to the same n+ electrode.
The EXLU1 batch exited FBK clean rooms at the end of 2022, made of LGAD sensors on substrates with thicknesses ranging from 15 to 45 $\mu$m.
Different optimisation studies are addressed in the batch, namely the periphery design for thin substrates, the increase of the radiation tolerance of the gain implant through a carbon shield, and the first production of compensated LGAD, where the...
Low Gain Avalanche Detectors (LGADs) are silicon detectors with modest internal gain (up to ~50) and great time resolution (20 ps). In a broad array of fields, including particle physics (4-D tracking) and photon science (X-ray imaging), LGADs are a promising R&D path. However, due to structures required to provide electrostatic isolation between LGAD pixels, the granularity of...
Meeting Point: https://maps.app.goo.gl/UdFqAHBdQQ557RQ67?g_st=ic
Tivat - Budva 2 hours (guided tour through the old town and free time) – Tivat
In this presentation, we show the results from the comparative analysis of the charge distribution along the x-axes, measured in two segmented UFSD prototypes after their interpad regions were illuminated by fs-laser of different intensities. The segmented UFSDs are originating from two different batch productions. The two spikes recorded at the edge of p-stops in IP region, in Type 10 UFSD...
In this presentation we report our research on W7 UFSD Type10 (2 p-stops + bias ring) and W7 UFSD Type 4 (with only bias ring in interpad region) prototype samples. Those results will be compared to the results obtained on W11 UFSD Type 10. Those UFSD prototype samples are not standard UFSD, they are produced in TI-LGAD batch as reference samples.
Wafer W7 and W11 differ in gain and in...
In this presentation, we report our findings on the impact of radiation-induced bulk defects on the previously reported phenomenon of strong charge multiplication in the inter-pad (IP) region of non-irradiated Trenched Low-Gain Avalanche Detectors (LGADs) that utilize two trenches as isolation structures. A comparative analysis is conducted between the results obtained from the study of...
This presentation aims to provide an update on the recently completed AC-LGAD run at CNM. We begin by showing the electrical characterization of the produced wafers by IV and CV measurements. Several devices with different pad configurations and sizes were subjected to extensive TCT measurements. The TCT measurements reveal that the signal weakens as the laser is moved further away from the AC...
Energy deposition of highly energetic particles was simulated in LGADs with GEANT4. The simulation step was adjusted to simulate deposits over the entire detector depth in <10 um steps. The signal formation was simulated with KDetSim using the parameters of HPK-P2 LGAD prototypes for ETL/HGTD and JSI model for impact ionization. The induced current pulses were convoluted with transfer...
The partial activation of the boron atoms implanted in the gain layer region will be investigated to mitigate the effect of radiation on the gain implant in LGAD sensors. Atoms of boron in the gain layer volume left as interstitials can interact with other impurities present in the silicon lattice, preventing the removal of boron atoms from substitutional positions.
The goal of the project is...
Cruise from Tivat to Mirista with fish lunch
Charged particle tracking detectors with very precise spatial and temporal resolution are a vital component of future high-energy and nuclear physics experiments. Thin film technology, as used e.g. in LCD displays and photovoltaics, could enable the fabrication of large-area, low-mass detectors in a straightforward and cost-effective way. In addition, physical and chemical vapor deposition...
Extreme Light Infrastructure (ELI) is a European Project forming a pan-European Laser facility to provide the most intense femtosecond lasers in the world for fundamental and applied research. The Extreme Light Infrastructure European Research Infrastructure Consortium (ELI ERIC) was established in 2021 to jointly manage operations of ELI Beamlines in the Czech Republic and ELI-ALPS in...
Additive manufacturing (AM) foam targets have gained significant attention in the realm of high-power laser–matter interaction. These two-photon polymerization 3D printed targets offer a controlled environment for laser interactions, enabling exceptional versatility in terms of average density, spatial structure, and material composition. Such attributes hold immense potential for diverse...
To better understand the performances of LGADs in terms of collected charge, it is important to know with high accuracy the models that predict the avalanche mechanism of charge carriers. Several literature models are not able to predict with very high precision the evolution of the avalanche multiplication in LGAD sensors, showing discrepancies with experimental data. This truth is driving...
