Speaker
Description
According to the observed “Acceptor Removal” effect a radiation induced Boron Containing Donor (BCD) defect is formed in p-type silicon. This defect shows bistable properties that are observed in variations of the depletion voltage as determined from C-V/I-V characteristics in PAD and LGAD structures irradiated with 10^14 1 MeV neutrons/cm2. The electronic properties of the BCD defect in its two different configurations (A and B) are presented alongside with the transformation kinetics in the 243 K- 308 K temperature range. We show that in the presence of carriers in excess, a transformation of defect structural configuration from A to B takes place. The reverse configurational transformation appears when the excess carriers are removed. Energy barriers of 0.36 eV and 0.94 eV are determined for the A→B and B→A configurational transformations of BCD defect, respectively. The determined transformation rates indicate that the defect structural transformations are accompanied by electron capture for the A→B conversion and by electron emission for the B→A transformation. A configuration coordinate diagram of the BCD defect transformations is proposed.
