Jozef Stefan Institute (SI)
Author in the following contributions
- Simulation of Landau fluctuations on timing performance of LGADs
- First measurements of irradiated CNM LGADs with carbon enriched gain layer
- Preparations for LGAD characterization with 30 MeV protons
- Characterization of W7 Type 10 and W7 Type 4 and comparison to W11 Type 10 LGAD prototypes
- Investigating the effect of processing and isolation layout design parameters of IP region with 2 p-stops and bias ring on charge collection and hole amplification in IP region: Case studies on Type 10 from Ti-LGAD batch (W11) and UFSD 4.0 (W18)
- Correlation between leakage current and charge gain in irradiated LGADs
- Radiation-Induced Bulk Defects and their Impact on the Charge Multiplication in Inter-Pad region in TI-LGADs: A Comparative Study between Irradiated and Non-Irradiated LGAD Samples with Two Trenches i
- The impact of single and multiple trenches on interpad resistance and hole multiplication in interpad region: The Transient Signal Waveforms and X- Profile Analyses
