42nd RD50 Workshop on Radiation Hard Semiconductor Devices for Very High Luminosity Colliders (Montenegro)

Details for Gregor Krambereger

Affiliation: Jozef Stefan Institute

Author in the following contribution

• Investigating the effect of processing and isolation layout design parameters of IP region with 2 p-stops and bias ring on charge collection and hole amplification in IP region: Case studies on Type 10 from Ti-LGAD batch (W11) and UFSD 4.0 (W18)