Irradiation effect on trapping time of silicon carbide detector

20 Jun 2023, 12:00
20m
Conference Hall (Hotel Regent Porto Montenegro)

Conference Hall

Hotel Regent Porto Montenegro

Obala bb, Tivat 85320, Montenegro

Speaker

Dr Suyu Xiao (Shandong Institute of Advanced Technology, Jinan, China)

Description

Top-TCT is carried out on non-irradiated and irradiated SiC detectors to study the charge collection, from which the trapping time can be estimated. Electrical characteristic with irradiation up to 7.8e14neq/cm2 has been studied and predicted. Thus, simulation of carriers in RASER has been optimized based on the contribution from trapping time. The electric read-out in RASER is proceed by NGSpice, resulting in good agreement.

Author

Dr Suyu Xiao (Shandong Institute of Advanced Technology, Jinan, China)

Presentation materials