Speaker
Tomas Ceponis
(Vilnius University)
Description
Carrier lifetime, being sensitive to defects present within the material, is an important parameter governing the operational characteristics of particle sensors. Therefore, the control of carrier lifetime in particle sensor structures is beneficial for predicting the variations of sensors operational characteristics. Microwave probed photoconductivity transients (MW-PC) technique can be employed for measuring of carrier lifetime. In this work, carrier lifetime variations obtained in LGAD structures, irradiated by penetrative protons of energy 24GeV/c in the fluence range of 1012-1016 cm-2, are considered.
Author
Tomas Ceponis
(Vilnius University)
Co-authors
Esteban Curras Rivera
(EPFL - Ecole Polytechnique Federale Lausanne (CH))
Eugenijus Gaubas
(Vilnius university)
Federico Ravotti
(CERN)
Dr
Jevgenij Pavlov
Laimonas Deveikis
(Vilnius University (LT))
Michael Moll
(CERN)
Moritz Wiehe
(CERN)
Roberta Arcidiacono
(Universita e INFN Torino (IT))
Vytautas Rumbauskas
(Vilnius University (LT))
