Speaker
Description
Due to its low leakage currents and high radiation displacement energy, silicon carbide (SiC) is an attractive candidate for future radiation hard detectors.
We present electrical characterization (I-V and C-V) and charge collection efficiency (CCE) measurements in forward and reverse bias for neutron-irradiated samples (CNM run 13575) between $5\times 10^{14}$ $\text{n}_\text{eq}/\text{cm}^2$ and $1 \times 10^{16}$ $\text{n}_\text{eq}/\text{cm}^2$ 1 MeV neutron equivalent fluence.
After irradiation, no diode-like current is present in forward direction, and charge is still collected for UV-TCT or impinging particles. The CCE measurements were carried out using alpha particles, UV-TCT, and proton beams, which allows for a comparison of different charge deposition profiles. For the alpha measurements, the CCE in forward and reverse bias are comparable. However, using UV-TCT and proton beams, a signal enhancement was observed for irradiated samples in forward bias, with CCEs surpassing 100%. These observations are in agreement with recent TPA-TCT results and correlate with the measured I-V characteristics.
Based on these results, possible mechanisms are discussed, and the required further investigations are highlighted.
