Conveners
Defects
- Ioana Pintilie (National Inst. of Materials Physics (RO))
- Michael Moll (CERN)
The concept of Non-Ionizing Energy Loss (NIEL) is used to compare and quantify the damage caused to semiconductor devices in various radiation environments. However, the current NIEL concept has a limitation in predicting the formation rates of cluster and point defects in silicon crystals for different particles and particle energies. Experimental observations have revealed differences in...
According to the observed “Acceptor Removal” effect a radiation induced Boron Containing Donor (BCD) defect is formed in p-type silicon. This defect shows bistable properties that are observed in variations of the depletion voltage as determined from C-V/I-V characteristics in PAD and LGAD structures irradiated with 10^14 1 MeV neutrons/cm2. The electronic properties of the BCD defect in its...
This study focuses on investigating radiation-induced defects in CZ p-type silicon pad diodes by subjecting them to irradiation with 23$\,$GeV protons at various fluences.
Two different diode thicknesses were used: 100$\,$μm and 350$\,$μm. The irradiation fluences applied were 1E+13, 7E+13, and 4E+14$\,$p/cm$^2$.
The macroscopic (IV & CV) and microscopic (TSC) radiation-induced changes in...
Carrier lifetime, being sensitive to defects present within the material, is an important parameter governing the operational characteristics of particle sensors. Therefore, the control of carrier lifetime in particle sensor structures is beneficial for predicting the variations of sensors operational characteristics. Microwave probed photoconductivity transients (MW-PC) technique can be...
In this work, we study boron-induced defects in 4H-SiC Schottky barrier diodes (SBDs) by employing minority carrier transient spectroscopy (MCTS). Additional electrical characterization was performed using temperature-dependent current-voltage (I–V), capacitance-voltage (C–V), and deep-level transient spectroscopy (DLTS) measurements to determine the effects of unintentionally incorporated...
Top-TCT is carried out on non-irradiated and irradiated SiC detectors to study the charge collection, from which the trapping time can be estimated. Electrical characteristic with irradiation up to 7.8e14neq/cm2 has been studied and predicted. Thus, simulation of carriers in RASER has been optimized based on the contribution from trapping time. The electric read-out in RASER is proceed by...
