42nd RD50 Workshop on Radiation Hard Semiconductor Devices for Very High Luminosity Colliders (Montenegro)

Session

SiC

20 Jun 2023, 14:20

Conference Hall (Hotel Regent Porto Montenegro)

Conveners

SiC

• Thomas Bergauer (Austrian Academy of Sciences (AT))

24. SILICON CARBIDE DIODES FOR ULTRA-HIGH DOSE RATE DOSIMETRY

Dr Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

20/06/2023, 14:20

The recent development of FLASH radiotherapy has led to the challenge of developing aequate sensors for active dosimetry in Ultra-High Dose Rate (UHDR) beam delivery. Especially in the case of FLASH electron beams the dose delivery can reach up to several Gy even in a single pulse with a few microsecond duration. The accurate dosimetry of this new UHDR radiotherapy modalities represents a key...

12. Investigation of neutron-irradiated 4H-SiC p-in-n Diodes in forward and reverse Bias

Andreas Gsponer (Austrian Academy of Sciences (AT))

20/06/2023, 14:40

Due to its low leakage currents and high radiation displacement energy, silicon carbide (SiC) is an attractive candidate for future radiation hard detectors.

We present electrical characterization (I-V and C-V) and charge collection efficiency (CCE) measurements in forward and reverse bias for neutron-irradiated samples (CNM run 13575) between $5\times 10^{14}$...

17. Improving TCAD simulation of 4H silicon carbide particle detectors

Philipp Gaggl (Austrian Academy of Sciences (AT))

20/06/2023, 15:00

Silicon Carbide (SiC) has several advantageous properties, making it an appealing detector material: the high charge carrier saturation velocity and breakdown voltage allow for a very fine intrinsic time resolution. The larger bandgap suppresses dark current, even for highly irradiated material, which omits the need for cooling and reduces power consumption.
TCAD simulations of SiC devices...

19. Development of 4H-SiC Low-Gain Avalanche Detector

Dr Wang Congcong (Institute of High Energy Physics of Chinese Academy of Sciences), Mr Xin Shi (Institute of High Energy Physics of Chinese Academy of Sciences)

20/06/2023, 15:20

Silicon carbide (SiC) has wider bandgap, higher atomic displacement energy, saturated electron drift velocity and thermal conductivity. It has the potential to become a high time resolution detector resistant to radiation and high temperature. A 4H-SiC Low-Gain Avalanche Detector (LGAD) epitaxial structure has been designed and epitaxial growth. The epitaxial structure of 4H-SiC LGAD was...

40. Discussion: SiC

Dr Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)), Thomas Bergauer (Austrian Academy of Sciences (AT))

20/06/2023, 15:40