Conveners
SiC
- Thomas Bergauer (Austrian Academy of Sciences (AT))
The recent development of FLASH radiotherapy has led to the challenge of developing aequate sensors for active dosimetry in Ultra-High Dose Rate (UHDR) beam delivery. Especially in the case of FLASH electron beams the dose delivery can reach up to several Gy even in a single pulse with a few microsecond duration. The accurate dosimetry of this new UHDR radiotherapy modalities represents a key...
Due to its low leakage currents and high radiation displacement energy, silicon carbide (SiC) is an attractive candidate for future radiation hard detectors.
We present electrical characterization (I-V and C-V) and charge collection efficiency (CCE) measurements in forward and reverse bias for neutron-irradiated samples (CNM run 13575) between $5\times 10^{14}$...
Silicon Carbide (SiC) has several advantageous properties, making it an appealing detector material: the high charge carrier saturation velocity and breakdown voltage allow for a very fine intrinsic time resolution. The larger bandgap suppresses dark current, even for highly irradiated material, which omits the need for cooling and reduces power consumption.
TCAD simulations of SiC devices...
Silicon carbide (SiC) has wider bandgap, higher atomic displacement energy, saturated electron drift velocity and thermal conductivity. It has the potential to become a high time resolution detector resistant to radiation and high temperature. A 4H-SiC Low-Gain Avalanche Detector (LGAD) epitaxial structure has been designed and epitaxial growth. The epitaxial structure of 4H-SiC LGAD was...
