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18th RD50 Workshop (Liverpool)

23–25 May 2011
Liverpool
Europe/Zurich timezone

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Contribution List

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  1. 28. Welcome to the 18th RD50 Workshop
    Prof. Philip Patrick Allport (University of Liverpool)
    23/05/2011, 13:00
  2. 34. Some practical issues
    Gianluigi Casse (Department of Physics), Michael Moll (CERN)
    23/05/2011, 13:20
  3. 20. Some aspects of proton implantation and subsequent thermal annealing
    Dr Werner Schustereder (Infineon Austria)
    23/05/2011, 13:30
    In contrast to the well known physics of conventional ion doping the situation for hydrogen seems to be quite different. The implantation of hydrogen induces crystal damage into the Si matrix. These defects are decorated by the hydrogen itself after a soft anneal and thereby a donator complex is build. We investigated those defects and complexes with the aim of acquiring a better physical...
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  4. 7. Deep level system Gaussian approximation according the extrinsic photoconductivity in irradiated Si diodes.
    Prof. Juozas Vaitkus (Inst. of Appl. Res. (IAR) - Vilnius University)
    23/05/2011, 14:00
    The WODEAN Si samples photoconductivity spectra were measured keeping the constant intensity of light at different wavelengths at low and medium temperatures. The deep level contribution was analysed by Lucovsky model proposing the Gaussian distribution of local level energies that followed from the preliminary results presented in the previous RD50 workshops. The time dependencies of...
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  5. 15. Carrier recombination and emission lifetimes in heavily irradiated pad–detectors and their impact on operational characteristics of pin diodes.
    Eugenijus Gaubas
    23/05/2011, 14:20
  6. 17. Influence of material defects on the electrical properties of test-diodes for future cms tracking detectors
    alexandra junkes (Hamburg University)
    23/05/2011, 14:40
    A large number of silicon sensors was ordered for a comprehensive study of the radiation hardness of test structures for future CMS detectors. Of those materials the unirradiated Float Zone sensors exhibit unexpected electrical properties studied by capacitance-voltage and current-voltage characteristics (CV-IV). The properties observed in this material can be explained by material defects...
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  7. 6. Measurement of detrapping times in irradiated silicon detectors
    Gregor Kramberger (Jozef Stefan Institute)
    23/05/2011, 15:00
    The TCT was exploited in a new way for measuring de-trapping times in irradiated silicon detectors. The method is based on measurements of the collected charge as a function of integration time on time scale much longer than drift times, which required acquisition of current waveforms on the time scale of few micro-seconds. The analysis of the data and first results will be presented. The...
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  8. 12. Study of Surface Radiation Damage in Silicon Sensors
    Mr Jiaguo Zhang (Institute of Experimental Physics, University of Hamburg, Germany)
    23/05/2011, 16:00
    The surface radiation damage of 12 keV X-rays on silicon test structures fabricated on high-ohmic n-type silicon and on strip sensors is investigated. At these X-ray energies no bulk damage in silicon is expected. However fixed oxide charges in the SiO2/Si3N4 layer and interface traps at the Si-SiO2 interface build up. Using TDRC (Thermally Dielectric Relaxation Current) and C-V and G-V...
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  9. 29. DMC - Discussion Session
    Mara Bruzzi (Dipartimento di Fisica)
    23/05/2011, 16:20
  10. 3. The CMS HPK campaign - An overview
    Alexander Dierlamm (Inst. fuer Experimentelle Kernphysik, KIT)
    24/05/2011, 09:00
    Detector Characterization
    Detector Characterization
    This contribution gives an overview on the campaign to evaluate the planar silicon sensor options for the CMS Tracker Upgrade. This evaluation is done with one industrial supplier, which is capable to provide the large quantity of sensors needed for the Tracker volume at very high quality. Wafers are processed on various materials (FZ, MCz, Epi), with several dopings (n-type, p-type with...
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  11. 19. CMS-HPK-Campaign: IV/CV-characteristics of the first sample of irradiated Diodes
    Mr Joachim Erfle (UHH - Institut fuer Experimental Physik (UHH)-Universitaet Ham)
    24/05/2011, 09:20
    Detector Characterization
    Detector Characterization
    The aim of the CMS-HPK-Campaign is to find a new Material for the HL-LHC Upgrade of the CMS-Tracker. Therefor a lot of different structures and materials is produced by HPK. A first sample of FZ Diodes of n- and p-type has been neutron and proton irradiated with 10^14 neq. Their IV/CV-characteristics will be presented.
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  12. 10. First CCE and TCT measurements on irradiated diodes of the CMS-HPK-Campaign
    Robert Eber (Institut für Experimentelle Kernphysik, KIT)
    24/05/2011, 09:40
    In a large campaign started by the CMS collaboration to identify the future silicon sensor technology baseline for a new tracker for the high-luminosity phase of LHC, a first set of floatzone diodes was irradiated to a fluence of 10^14neq/cm2 with protons, neutrons and mixed exposure. Measurements of leakage current, depletion voltage and charge collection efficiency with an infrared Laser on...
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  13. 27. Custom made components for Transient Current Technique
    Gregor Kramberger (Jozef Stefan Institute)
    24/05/2011, 10:00
    Current amplifiers with and without integrated Bias-T and laser drivers (with heads) were developed for the dedicated use in TCT. The results from the first tests will be shown.
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  14. 26. Edge TCT and Charge Collection Efficiency study on pion irradiated n-on-p strips
    Nicola Pacifico (CERN & Università degli Studi di Bari)
    24/05/2011, 10:50
    Silicon n-on-p strip detectors produced by CIS, have been irradiated with pions in a fluence range 2e14pi/cm^2-1e15pi/cm^2. The irradiated detectors have been measured by means of the Edge-TCT and Alibava CCE setup, as well as standard CV/IV characterization. The detectors have shown a fairly low gc value. Investigation went in the direction of looking for correlation between the different...
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  15. 25. Edge-TCT and Alibava measurements with neutron and pion irradiated micro-strip detectors
    Marko Milovanovic (Jozef Stefan Institute, Ljubljana)
    24/05/2011, 11:10
    Charge collection measurements with both Edge-TCT and Alibava on neutron i pion irradiated micro-strip detectors will be presented. Edge-TCT measurements were made in reverse and forward bias and include several annealing steps at 60C (according to the standard CERN scenario), as well as different temperature and laser frequency steps.
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  16. 8. Gamma irradiation induced suppression of reverse annealing in neutron irradiated MCZ Si detectors
    Dr Zheng Li (Brookhaven National laboratory)
    24/05/2011, 11:30
    For the development of radiation hard Si detectors for the SiD BeamCal program for International Linear Collider (ILC), n-type MCZ Si detectors were irradiated first by fast neutrons to fluences of 1.5x10^14 and 3x10^14 neq/cm2, and then by gamma. It is found that gamma radiation has suppressed reverse annealing in neutron irradiated detectors which were subject to gamma radiation during the...
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  17. 24. Generation current temperature scaling
    Dr Alexandre Chilingarov (Lancaster University)
    24/05/2011, 11:50
    Temperature dependence of the generation current is analysed using the experimental and theoretical data for intrinsic carrier concentration. It is recommended that the current is scaled with temperature by the following formula: T^2 exp(-1.21 eV/2kT) both for non-irradiated and irradiated Si detectors.
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  18. 30. Discussion Session: Detector Characterization
    Eckhart Fretwurst (II. Institut fuer Experimentalphysik)
    24/05/2011, 12:10
  19. 1. Update on Performance of Punch-through Potection structures
    Hartmut Sadrozinski (SCIPP, UC santa Cruz)
    24/05/2011, 14:00
    We present the results on characteristics and performance of different punch-through structures when the silicon sensors are flooded with IR radiation. WE report dependence on p-spray vs. p-stop and doping density, radiation levels and types, gate effects, and IR intensity. Punch-through protection depends on the ratio of two resistors, the bulk resistance and the asymptotic resisstance of...
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  20. 36. Low Resistance Strip Sensors
    Dr Miguel Ullán (CNM-IMB (CSIC), Barcelona)
    24/05/2011, 14:20
    Full Detector Systems (Strip sensors)
    Full Detector Systems
    AC-coupled silicon strip sensors can get damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous...
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  21. 5. CMS tracker upgrade test beam activities
    Panja-Riina Luukka (Helsinki Institute of Physics HIP)
    24/05/2011, 14:40
    In the SLHC experiments the performance of the tracking detectors after high radiation fluencies will be an important issue. For example the CMS strip tracker will receive fluencies up to 10^15 MeV neq, and the pixel detector factor of ten higher than that. Thus, in addition to characterizing the electrical parameters of the new radiation-hard sensors, it is very important to test their...
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  22. 4. First measurements on mixed-irradiated mini strip sensors and outlook to Lorentz angle studies as part of the CMS-HPK Campaign
    Mr Andreas Nuernberg (Institut fuer Experimentelle Kernphysik, KIT)
    24/05/2011, 15:00
    As part of the CMS-HPK Campaign, Lorentz angle measurements on irradiated mini strip sensors will be performed. For that, floatzone mini sensors of three different thicknesses and different doping type (p-in-n, n-in-p with p-stop and p-spray) were irradiated with neutrons and protons to several fluences up to 1.4e16 neq/cm^2. During the pre-qualification process, IV and CV measurements were...
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  23. 0. CCE Measurements on Irradiated HPK-ATLAS07 n-on-p Sensors
    Adrian Driewer (Freiburg University)
    24/05/2011, 15:20
    Full Detector Systems (Strip sensors)
    Full Detector Systems
    A set of strip sensors has been irradiated with pions and protons in a mixed irradiation campaign. The results of CCE measurements after each irradiation step will be presented. In another study three sensors were irradiated with protons in Karlsruhe with a fluence of 1.1E15 n_eq/cm^2. The difference in charge collection measurements will be compared when sensors were annealed at room...
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  24. 11. CCE measurements with SCT128A chip on strip detectors irradiated with pions
    Igor Mandic (University of Ljubljana)
    24/05/2011, 16:10
    Recent charge collection measurements with SCT128A chip on Hamamatsu mini strip detectors will be presented. The detectors were irradiated with pions at PSI in 2010. Measurements were made after several annealing steps at 60C.
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  25. 21. Low Temperature Electrical Characteristics of Irradiated Sensors
    Dr Jan Bohm (Institute of Physics AS CR)
    24/05/2011, 16:30
    Full Detector Systems (Strip sensors)
    Full Detector Systems
    Three groups of ATLAS07 miniature sensors have been irradiated on the reactor in Rez near Prague up to fluences 4E14, 2E15 and 1E16 neq/cm2. The basic electrical characteristics IV, CV, an interstrip capacitance, a coupling capacitance and the DC PTP have been measured at temperature -30 deg C and compared to ones of the non-irradiated sensors.
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  26. 38. Overview of charge collection measurements after hadron irradiation - Trying to summarize all the CC(V) data we have to date.
    Dr Anthony Affolder (University of Liverpool)
    24/05/2011, 16:50
  27. 35. Accelerated and room temperature annealing of the CC(V)
    Gianluigi Casse (Department of Physics)
    24/05/2011, 17:10
  28. 2. Atomoc Layer Ddeposition (ALD) Treatment of cleaved SSD to achieve slim edges
    Hartmut Sadrozinski (SCIPP, UC santa Cruz)
    24/05/2011, 17:30
    We present the present status of our work on slim edges: using post-fabrication ALD treatment, we can reduce the width of non-active material at the edge considerably without breakdown. ALD is shown to work for both p-type and n-type sensors. We show the first results on charge collection.
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  29. 31. Discussion Session: FDS
    Gregor Kramberger (Jozef Stefan Institute)
    24/05/2011, 17:50
  30. 37. Lab measurements and testbeam results of irradiated n<sup>+</sup>-in-n planar pixel sensors for IBL and beyond
    Mr André Rummler (TU Dortmund)
    25/05/2011, 09:00
    Full Detector Systems (Pixel Sensors)
    Pixel and 3D sensors
    We have irradiated n+-in-n sensor assemblies based on the current ATLAS readout chip FE-I3 up to the required IBL end of life fluence 5x1015 neq/cm2 (and further up to 2x1016 neq/cm2 for HLLHC) using thermal neutrons in Ljubljana as well as low energy protons in Karlsruhe. Promising results, particularly hit...
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  31. 18. Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS Upgrade
    Philipp Weigell (MPI für Physik)
    25/05/2011, 09:20
    FE-I3 compatible, n-in-p single chip modules, produced in the framework of a joint RD50-ATLAS planar pixel group production have been irradatiad up to 5x1015 neq/cm2 with protons (KIT and CERN PS) and reactor neutrons (JSI). They were characterized in the laboratory as well as under beam-test conditions at the CERN SPS. New results on the charge collection...
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  32. 22. Micron n-in-p analogue SCA pixel detector fine neutron radiation characterization
    Mr Dean Charles Forshaw (Department of Physics-Oliver Lodge Laboratory-University of Liv)
    25/05/2011, 09:40
    The charge sharing between adjacent segmented electrodes is an important parameter for the spatial resolution of tracking silicon sensors. Hadron irradiation is though known to decrease charge sharing by mean of trapping of the signal charge carriers generated by the ionising event, to eventually reduce the resolution of the sensor to binary. The study of the degradation of charge...
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  33. 23. Characterization and test beam studies for FE-I3 planar n-in-p and 3D double-sided pixel sensors for the ATLAS upgrade
    Mr Roger Caminal Armadans (IFAE - Institut de Física d'Altes Energies-Universitat Autònoma)
    25/05/2011, 10:00
    Solid state detectors provide very high precision tracking in particle physics experiments. However, their tracking performance start to degrade at fluxes of radiation around ~10¹⁴-10¹⁵ hadrons/cm². Research on new radiation-hard pixel sensor technologies is being done at IFAE, in collaboration with CNM. Results of the characterisation and beam test studies of n-in-p planar and 3D double sided...
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  34. 16. Recent results from Atlas 3d collaboration
    Dr Giulio Pellegrini (Centro Nacional de Microelectronica CNM-IMB-CSIC)
    25/05/2011, 10:50
    I will report on the last fabrications and measurements of 3D detectors for the IBL project.
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  35. 13. Update of 3D Simulations and Processing of New BNL 3D-Trench-Electrode Detectors
    Zheng Li (BNL)
    25/05/2011, 11:10
    Update of 3D Simulations and Processing of New BNL 3D-Trench-Electrode Detectors Z. Li1 , D. Bassignana2, G. Pellegrini2, M. Lozano2 and D. Quirion2 1 Brookhaven National Laboratory, Bldg. 535B, Upton, NY 11973-5000, USA 2Centro Nacional de Microelectrónica IMB-CNM-CSIC, Campus Universitat Autònoma de Barcelona, 08193 Bellaterra, Barcelona (Spain) More full 3D simulations on the new...
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  36. 32. Discussions on Pixel and 3D
    Richard Bates (Department of Physics and Astronomy)
    25/05/2011, 11:30
  37. 33. Lunch Break
  38. 9. Recent results on I-V characteristics study for TOTEM edgeless detectors
    Dr Vladimir Eremin (Ioffe Physical Technical Institute RAS)
    Presentation is done on behalf of Ioffe PTI and RIMST groups, and CERN-TOTEM collaboration. The control of I-V characteristic of planar edgeless detectors with current terminating structure which are produced by PTI for TOTEM collaboration is a crucial issue for the proper detector operation. Recent results on the edge properties exhibit that different areas of the edge produce specific...
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