Prof.
Philip Patrick Allport
(University of Liverpool)
23/05/2011, 13:00
Gianluigi Casse
(Department of Physics),
Michael Moll
(CERN)
23/05/2011, 13:20
Dr
Werner Schustereder
(Infineon Austria)
23/05/2011, 13:30
In contrast to the well known physics of conventional ion doping the situation for hydrogen seems to be quite different. The implantation of hydrogen induces crystal damage into the Si matrix. These defects are decorated by the hydrogen itself after a soft anneal and thereby a donator complex is build. We investigated those defects and complexes with the aim of acquiring a better physical...
Prof.
Juozas Vaitkus
(Inst. of Appl. Res. (IAR) - Vilnius University)
23/05/2011, 14:00
The WODEAN Si samples photoconductivity spectra were measured keeping the constant intensity of light at different wavelengths at low and medium temperatures. The deep level contribution was analysed by Lucovsky model proposing the Gaussian distribution of local level energies that followed from the preliminary results presented in the previous RD50 workshops. The time dependencies of...
Eugenijus Gaubas
23/05/2011, 14:20
alexandra junkes
(Hamburg University)
23/05/2011, 14:40
A large number of silicon sensors was ordered for a comprehensive study of the radiation hardness of test structures for future CMS detectors. Of those materials the unirradiated Float Zone sensors exhibit unexpected electrical properties studied by capacitance-voltage and current-voltage characteristics (CV-IV). The properties observed in this material can be explained by material defects...
Gregor Kramberger
(Jozef Stefan Institute)
23/05/2011, 15:00
The TCT was exploited in a new way for measuring de-trapping times in irradiated silicon detectors. The method is based on measurements of the collected charge as a function of integration time on time scale much longer than drift times, which required acquisition of current waveforms on the time scale of few micro-seconds. The analysis of the data and first results will be presented. The...
Mr
Jiaguo Zhang
(Institute of Experimental Physics, University of Hamburg, Germany)
23/05/2011, 16:00
The surface radiation damage of 12 keV X-rays on silicon test structures fabricated on high-ohmic n-type silicon and on strip sensors is investigated. At these X-ray energies no bulk damage in silicon is expected. However fixed oxide charges in the SiO2/Si3N4 layer and interface traps at the Si-SiO2 interface build up.
Using TDRC (Thermally Dielectric Relaxation Current) and C-V and G-V...
Mara Bruzzi
(Dipartimento di Fisica)
23/05/2011, 16:20
Alexander Dierlamm
(Inst. fuer Experimentelle Kernphysik, KIT)
24/05/2011, 09:00
Detector Characterization
This contribution gives an overview on the campaign to evaluate the planar silicon sensor options for the CMS Tracker Upgrade. This evaluation is done with one industrial supplier, which is capable to provide the large quantity of sensors needed for the Tracker volume at very high quality. Wafers are processed on various materials (FZ, MCz, Epi), with several dopings (n-type, p-type with...
Mr
Joachim Erfle
(UHH - Institut fuer Experimental Physik (UHH)-Universitaet Ham)
24/05/2011, 09:20
Detector Characterization
The aim of the CMS-HPK-Campaign is to find a new Material for the HL-LHC Upgrade of the CMS-Tracker. Therefor a lot of different structures and materials is produced by HPK. A first sample of FZ Diodes of n- and p-type has been neutron and proton irradiated with 10^14 neq. Their IV/CV-characteristics will be presented.
Robert Eber
(Institut für Experimentelle Kernphysik, KIT)
24/05/2011, 09:40
In a large campaign started by the CMS collaboration to identify the future silicon sensor technology baseline for a new tracker for the high-luminosity phase of LHC, a first set of floatzone diodes was irradiated to a fluence of 10^14neq/cm2 with protons, neutrons and mixed exposure. Measurements of leakage current, depletion voltage and charge collection efficiency with an infrared Laser on...
Gregor Kramberger
(Jozef Stefan Institute)
24/05/2011, 10:00
Current amplifiers with and without integrated Bias-T and laser drivers (with heads) were developed for the dedicated use in TCT. The results from the first tests will be shown.
Nicola Pacifico
(CERN & Università degli Studi di Bari)
24/05/2011, 10:50
Silicon n-on-p strip detectors produced by CIS, have been irradiated with pions in a fluence range 2e14pi/cm^2-1e15pi/cm^2. The irradiated detectors have been measured by means of the Edge-TCT and Alibava CCE setup, as well as standard CV/IV characterization. The detectors have shown a fairly low gc value. Investigation went in the direction of looking for correlation between the different...
Marko Milovanovic
(Jozef Stefan Institute, Ljubljana)
24/05/2011, 11:10
Charge collection measurements with both Edge-TCT and Alibava on neutron i pion irradiated micro-strip detectors will be presented. Edge-TCT measurements were made in reverse and forward bias and include several annealing steps at 60C (according to the standard CERN scenario), as well as different temperature and laser frequency steps.
8.
Gamma irradiation induced suppression of reverse annealing in neutron irradiated MCZ Si detectors
Dr
Zheng Li
(Brookhaven National laboratory)
24/05/2011, 11:30
For the development of radiation hard Si detectors for the SiD BeamCal program for International Linear Collider (ILC), n-type MCZ Si detectors were irradiated first by fast neutrons to fluences of 1.5x10^14 and 3x10^14 neq/cm2, and then by gamma. It is found that gamma radiation has suppressed reverse annealing in neutron irradiated detectors which were subject to gamma radiation during the...
Dr
Alexandre Chilingarov
(Lancaster University)
24/05/2011, 11:50
Temperature dependence of the generation current is analysed using the experimental and theoretical data for intrinsic carrier concentration. It is recommended that the current is scaled with temperature by the following formula: T^2 exp(-1.21 eV/2kT) both for non-irradiated and irradiated Si detectors.
Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
24/05/2011, 12:10
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
24/05/2011, 14:00
We present the results on characteristics and performance of different punch-through structures when the silicon sensors are flooded with IR radiation.
WE report dependence on p-spray vs. p-stop and doping density, radiation levels and types, gate effects, and IR intensity.
Punch-through protection depends on the ratio of two resistors, the bulk resistance and the asymptotic resisstance of...
Dr
Miguel Ullán
(CNM-IMB (CSIC), Barcelona)
24/05/2011, 14:20
Full Detector Systems (Strip sensors)
AC-coupled silicon strip sensors can get damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous...
Panja-Riina Luukka
(Helsinki Institute of Physics HIP)
24/05/2011, 14:40
In the SLHC experiments the performance of the tracking detectors after high radiation fluencies will be an important issue. For example the CMS strip tracker will receive fluencies up to 10^15 MeV neq, and the pixel detector factor of ten higher than that. Thus, in addition to characterizing the electrical parameters of the new radiation-hard sensors, it is very important to test their...
Mr
Andreas Nuernberg
(Institut fuer Experimentelle Kernphysik, KIT)
24/05/2011, 15:00
As part of the CMS-HPK Campaign, Lorentz angle measurements on irradiated mini strip sensors will be performed. For that, floatzone mini sensors of three different thicknesses and different doping type (p-in-n, n-in-p with p-stop and p-spray) were irradiated with neutrons and protons to several fluences up to 1.4e16 neq/cm^2. During the pre-qualification process, IV and CV measurements were...
Adrian Driewer
(Freiburg University)
24/05/2011, 15:20
Full Detector Systems (Strip sensors)
A set of strip sensors has been irradiated with pions and protons in a mixed irradiation campaign. The results of CCE measurements after each irradiation step will be presented.
In another study three sensors were irradiated with protons in Karlsruhe with a fluence of 1.1E15 n_eq/cm^2. The difference in charge collection measurements will be compared when sensors were annealed at room...
Igor Mandic
(University of Ljubljana)
24/05/2011, 16:10
Recent charge collection measurements with SCT128A chip on Hamamatsu mini strip detectors will be presented. The detectors were irradiated with pions at PSI in 2010. Measurements were made after several annealing steps at 60C.
Dr
Jan Bohm
(Institute of Physics AS CR)
24/05/2011, 16:30
Full Detector Systems (Strip sensors)
Three groups of ATLAS07 miniature sensors have been irradiated on the reactor in Rez near Prague up to fluences 4E14, 2E15 and 1E16 neq/cm2. The basic electrical characteristics IV, CV, an interstrip capacitance, a coupling capacitance and the DC PTP have been measured at temperature -30 deg C and compared to ones of the non-irradiated sensors.
Dr
Anthony Affolder
(University of Liverpool)
24/05/2011, 16:50
Gianluigi Casse
(Department of Physics)
24/05/2011, 17:10
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
24/05/2011, 17:30
We present the present status of our work on slim edges: using post-fabrication ALD treatment, we can reduce the width of non-active material at the edge considerably without breakdown.
ALD is shown to work for both p-type and n-type sensors.
We show the first results on charge collection.
Gregor Kramberger
(Jozef Stefan Institute)
24/05/2011, 17:50
Mr
André Rummler
(TU Dortmund)
25/05/2011, 09:00
Full Detector Systems (Pixel Sensors)
We have irradiated n+-in-n sensor assemblies based on the current ATLAS readout chip FE-I3 up to the required IBL end of life fluence 5x1015 neq/cm2 (and further up to 2x1016 neq/cm2 for HLLHC) using thermal neutrons in Ljubljana as well as low energy protons in Karlsruhe. Promising results, particularly hit...
Philipp Weigell
(MPI für Physik)
25/05/2011, 09:20
FE-I3 compatible, n-in-p single chip modules, produced in the framework of a joint RD50-ATLAS planar pixel group production have been irradatiad up to 5x1015 neq/cm2 with protons (KIT and CERN PS) and reactor neutrons (JSI). They were characterized in the laboratory as well as under beam-test conditions at the CERN SPS.
New results on the charge collection...
Mr
Dean Charles Forshaw
(Department of Physics-Oliver Lodge Laboratory-University of Liv)
25/05/2011, 09:40
The charge sharing between adjacent segmented electrodes is an important parameter for the spatial resolution of tracking silicon sensors. Hadron irradiation is though known to decrease charge sharing by mean of trapping of the signal charge carriers
generated by the ionising event, to eventually reduce the resolution of the sensor to binary. The study of the degradation of charge...
Mr
Roger Caminal Armadans
(IFAE - Institut de Física d'Altes Energies-Universitat Autònoma)
25/05/2011, 10:00
Solid state detectors provide very high precision tracking in particle physics experiments. However, their tracking performance start to degrade at fluxes of radiation around ~10¹⁴-10¹⁵ hadrons/cm². Research on new radiation-hard pixel sensor technologies is being done at IFAE, in collaboration with CNM. Results of the characterisation and beam test studies of n-in-p planar and 3D double sided...
Dr
Giulio Pellegrini
(Centro Nacional de Microelectronica CNM-IMB-CSIC)
25/05/2011, 10:50
I will report on the last fabrications and measurements of 3D detectors for the IBL project.
Richard Bates
(Department of Physics and Astronomy)
25/05/2011, 11:30
Dr
Vladimir Eremin
(Ioffe Physical Technical Institute RAS)
Presentation is done on behalf of Ioffe PTI and RIMST groups, and CERN-TOTEM collaboration.
The control of I-V characteristic of planar edgeless detectors with current terminating structure which are produced by PTI for TOTEM collaboration is a crucial issue for the proper detector operation. Recent results on the edge properties exhibit that different areas of the edge produce specific...
