Speaker
Dr
Alexandre Chilingarov
(Lancaster University)
Description
Temperature dependence of the generation current is analysed using the experimental and theoretical data for intrinsic carrier concentration. It is recommended that the current is scaled with temperature by the following formula: T^2 exp(-1.21 eV/2kT) both for non-irradiated and irradiated Si detectors.
Author
Dr
Alexandre Chilingarov
(Lancaster University)
