Speaker
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
Description
We present the results on characteristics and performance of different punch-through structures when the silicon sensors are flooded with IR radiation.
WE report dependence on p-spray vs. p-stop and doping density, radiation levels and types, gate effects, and IR intensity.
Punch-through protection depends on the ratio of two resistors, the bulk resistance and the asymptotic resisstance of the punch-through channel.
Author
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
