Speaker
alexandra junkes
(Hamburg University)
Description
A large number of silicon sensors was ordered for a comprehensive study of the radiation hardness of test structures for future CMS detectors. Of those materials the unirradiated Float Zone sensors exhibit unexpected electrical properties studied by capacitance-voltage and current-voltage characteristics (CV-IV). The properties observed in this material can be explained by material defects introduced during the production process. A characterisation of the crystal defects was carried out by means of Deep Level Transient Spectroscopy (DLTS).
Author
alexandra junkes
(Hamburg University)
Co-authors
Doris Eckstein
(DESY)
Eckhart Fretwurst
(Hamburg University)
Georg Steinbrück
(Hamburg University)
Joachim Erfle
(Hamburg University)
Thomas Pöhlsen
(Hamburg University)
