18th RD50 Workshop (Liverpool)

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS Upgrade

25 May 2011, 09:20

20m

Liverpool

Pixel and 3D sensors

Speaker

Philipp Weigell (MPI für Physik)

Description

FE-I3 compatible, n-in-p single chip modules, produced in the framework of a joint RD50-ATLAS planar pixel group production have been irradatiad up to 5x10¹⁵ n_eq/cm² with protons (KIT and CERN PS) and reactor neutrons (JSI). They were characterized in the laboratory as well as under beam-test conditions at the CERN SPS. New results on the charge collection performance as well on the high voltage stability will be presented. Additionally, an update on the results from beam-test studies is given.

Presentation materials

Slides

talk.pdf