Speaker
Dr
Miguel Ullán
(CNM-IMB (CSIC), Barcelona)
Description
AC-coupled silicon strip sensors can get damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the PT structure leading to large voltages. The proposal aims to fabricating low-resistance strips by means of the deposition of a conducting material in contact with the implants, assuring the effectiveness of the PT structures.
Author
Dr
Miguel Ullán
(CNM-IMB (CSIC), Barcelona)
Co-authors
Dr
Alex Grillo
(SCIPP)
Carlos Lacasta
(IFIC)
Dr
Giulio Pellegrini
(IMB-CNM)
Dr
Hartmut Sadrozinski
(SCIPP)
Prof.
Manuel Lozano
(IMB-CNM)
Dr
Vitaliy Fadeyev
(SCIPP)
