Conveners
Defect and Material Characterization
- Mara Bruzzi (Dipartimento di Fisica)
Dr
Werner Schustereder
(Infineon Austria)
23/05/2011, 13:30
In contrast to the well known physics of conventional ion doping the situation for hydrogen seems to be quite different. The implantation of hydrogen induces crystal damage into the Si matrix. These defects are decorated by the hydrogen itself after a soft anneal and thereby a donator complex is build. We investigated those defects and complexes with the aim of acquiring a better physical...
Prof.
Juozas Vaitkus
(Inst. of Appl. Res. (IAR) - Vilnius University)
23/05/2011, 14:00
The WODEAN Si samples photoconductivity spectra were measured keeping the constant intensity of light at different wavelengths at low and medium temperatures. The deep level contribution was analysed by Lucovsky model proposing the Gaussian distribution of local level energies that followed from the preliminary results presented in the previous RD50 workshops. The time dependencies of...
Eugenijus Gaubas
23/05/2011, 14:20
alexandra junkes
(Hamburg University)
23/05/2011, 14:40
A large number of silicon sensors was ordered for a comprehensive study of the radiation hardness of test structures for future CMS detectors. Of those materials the unirradiated Float Zone sensors exhibit unexpected electrical properties studied by capacitance-voltage and current-voltage characteristics (CV-IV). The properties observed in this material can be explained by material defects...
Gregor Kramberger
(Jozef Stefan Institute)
23/05/2011, 15:00
The TCT was exploited in a new way for measuring de-trapping times in irradiated silicon detectors. The method is based on measurements of the collected charge as a function of integration time on time scale much longer than drift times, which required acquisition of current waveforms on the time scale of few micro-seconds. The analysis of the data and first results will be presented. The...
Mr
Jiaguo Zhang
(Institute of Experimental Physics, University of Hamburg, Germany)
23/05/2011, 16:00
The surface radiation damage of 12 keV X-rays on silicon test structures fabricated on high-ohmic n-type silicon and on strip sensors is investigated. At these X-ray energies no bulk damage in silicon is expected. However fixed oxide charges in the SiO2/Si3N4 layer and interface traps at the Si-SiO2 interface build up.
Using TDRC (Thermally Dielectric Relaxation Current) and C-V and G-V...
