Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
24/05/2011, 14:00
We present the results on characteristics and performance of different punch-through structures when the silicon sensors are flooded with IR radiation.
WE report dependence on p-spray vs. p-stop and doping density, radiation levels and types, gate effects, and IR intensity.
Punch-through protection depends on the ratio of two resistors, the bulk resistance and the asymptotic resisstance of...
Dr
Miguel Ullán
(CNM-IMB (CSIC), Barcelona)
24/05/2011, 14:20
Full Detector Systems (Strip sensors)
AC-coupled silicon strip sensors can get damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous...
Panja-Riina Luukka
(Helsinki Institute of Physics HIP)
24/05/2011, 14:40
In the SLHC experiments the performance of the tracking detectors after high radiation fluencies will be an important issue. For example the CMS strip tracker will receive fluencies up to 10^15 MeV neq, and the pixel detector factor of ten higher than that. Thus, in addition to characterizing the electrical parameters of the new radiation-hard sensors, it is very important to test their...
Mr
Andreas Nuernberg
(Institut fuer Experimentelle Kernphysik, KIT)
24/05/2011, 15:00
As part of the CMS-HPK Campaign, Lorentz angle measurements on irradiated mini strip sensors will be performed. For that, floatzone mini sensors of three different thicknesses and different doping type (p-in-n, n-in-p with p-stop and p-spray) were irradiated with neutrons and protons to several fluences up to 1.4e16 neq/cm^2. During the pre-qualification process, IV and CV measurements were...
Adrian Driewer
(Freiburg University)
24/05/2011, 15:20
Full Detector Systems (Strip sensors)
A set of strip sensors has been irradiated with pions and protons in a mixed irradiation campaign. The results of CCE measurements after each irradiation step will be presented.
In another study three sensors were irradiated with protons in Karlsruhe with a fluence of 1.1E15 n_eq/cm^2. The difference in charge collection measurements will be compared when sensors were annealed at room...
Igor Mandic
(University of Ljubljana)
24/05/2011, 16:10
Recent charge collection measurements with SCT128A chip on Hamamatsu mini strip detectors will be presented. The detectors were irradiated with pions at PSI in 2010. Measurements were made after several annealing steps at 60C.
Dr
Jan Bohm
(Institute of Physics AS CR)
24/05/2011, 16:30
Full Detector Systems (Strip sensors)
Three groups of ATLAS07 miniature sensors have been irradiated on the reactor in Rez near Prague up to fluences 4E14, 2E15 and 1E16 neq/cm2. The basic electrical characteristics IV, CV, an interstrip capacitance, a coupling capacitance and the DC PTP have been measured at temperature -30 deg C and compared to ones of the non-irradiated sensors.
Dr
Anthony Affolder
(University of Liverpool)
24/05/2011, 16:50
Gianluigi Casse
(Department of Physics)
24/05/2011, 17:10
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
24/05/2011, 17:30
We present the present status of our work on slim edges: using post-fabrication ALD treatment, we can reduce the width of non-active material at the edge considerably without breakdown.
ALD is shown to work for both p-type and n-type sensors.
We show the first results on charge collection.
