Speaker
Description
Silicon Photomultipliers (SiPMs), composed of arrays of avalanche photodiodes operating in Geiger mode, are widely used in particle and nuclear physics experiments due to their compact size, magnetic-field insensitivity, and low operating voltage compared to conventional photomultiplier tubes. However, their performance can degrade under neutron irradiation, potentially affecting experimental accuracy. In this study, two SiPM types (Hamamatsu S13360 and S14160) were irradiated to investigate radiation-induced changes. During irradiation, LED-triggered signals were continuously recorded with a 500-MHz flash ADC to monitor variations in gain, baseline shift, and dark current rate. I–V characteristics were also measured before and after irradiation to evaluate leakage current and breakdown voltage shifts. Ongoing studies focus on annealing effects, which are expected to partially recover SiPM performance after irradiation. These results provide insights into the relative radiation tolerance, degradation mechanisms, and potential recovery behavior of SiPMs in high-radiation environments.
